Sb-based third generation at Center for Quantum Devices

Manijeh Razeghi

doi:10.1117/12.2564813

Sb-based third generation at Center for Quantum Devices

Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Sb-based III-V semiconductors are a promising alternative to HgCdTe. They can be produced with a similar bandgap to HgCdTe, but take advantage of the strong bonding between group III and group V elements which leads to very stable materials, good radiation hardness, and high uniformity. In this paper, we will discuss the recent progress of our research and present the main contributions of the Center for Quantum Devices to the Sb-based 3th generation imagers.

Original language	English (US)
Title of host publication	Infrared Technology and Applications XLVI
Editors	Bjorn F. Andresen, Gabor F. Fulop, John Lester Miller, Lucy Zheng
Publisher	SPIE
ISBN (Electronic)	9781510635913
DOIs	https://doi.org/10.1117/12.2564813
State	Published - 2020
Event	Infrared Technology and Applications XLVI 2020 - None, United States Duration: Apr 27 2020 → May 8 2020

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11407
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Infrared Technology and Applications XLVI 2020
Country/Territory	United States
City	None
Period	4/27/20 → 5/8/20

Keywords

antimony
focal plane array
photodetector
type-II superlattice

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.2564813

Cite this

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title = "Sb-based third generation at Center for Quantum Devices",

abstract = "Sb-based III-V semiconductors are a promising alternative to HgCdTe. They can be produced with a similar bandgap to HgCdTe, but take advantage of the strong bonding between group III and group V elements which leads to very stable materials, good radiation hardness, and high uniformity. In this paper, we will discuss the recent progress of our research and present the main contributions of the Center for Quantum Devices to the Sb-based 3th generation imagers.",

keywords = "antimony, focal plane array, photodetector, type-II superlattice",

author = "Manijeh Razeghi",

note = "Publisher Copyright: {\textcopyright} COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.; Infrared Technology and Applications XLVI 2020 ; Conference date: 27-04-2020 Through 08-05-2020",

year = "2020",

doi = "10.1117/12.2564813",

language = "English (US)",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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Razeghi, M 2020, Sb-based third generation at Center for Quantum Devices. in BF Andresen, GF Fulop, JL Miller & L Zheng (eds), Infrared Technology and Applications XLVI., 114070T, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11407, SPIE, Infrared Technology and Applications XLVI 2020, None, United States, 4/27/20. https://doi.org/10.1117/12.2564813

Sb-based third generation at Center for Quantum Devices. / Razeghi, Manijeh.
Infrared Technology and Applications XLVI. ed. / Bjorn F. Andresen; Gabor F. Fulop; John Lester Miller; Lucy Zheng. SPIE, 2020. 114070T (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11407).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Sb-based third generation at Center for Quantum Devices

AU - Razeghi, Manijeh

N1 - Publisher Copyright: © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

PY - 2020

Y1 - 2020

N2 - Sb-based III-V semiconductors are a promising alternative to HgCdTe. They can be produced with a similar bandgap to HgCdTe, but take advantage of the strong bonding between group III and group V elements which leads to very stable materials, good radiation hardness, and high uniformity. In this paper, we will discuss the recent progress of our research and present the main contributions of the Center for Quantum Devices to the Sb-based 3th generation imagers.

AB - Sb-based III-V semiconductors are a promising alternative to HgCdTe. They can be produced with a similar bandgap to HgCdTe, but take advantage of the strong bonding between group III and group V elements which leads to very stable materials, good radiation hardness, and high uniformity. In this paper, we will discuss the recent progress of our research and present the main contributions of the Center for Quantum Devices to the Sb-based 3th generation imagers.

KW - antimony

KW - focal plane array

KW - photodetector

KW - type-II superlattice

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M3 - Conference contribution

AN - SCOPUS:85088118220

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Infrared Technology and Applications XLVI

A2 - Andresen, Bjorn F.

A2 - Fulop, Gabor F.

A2 - Miller, John Lester

A2 - Zheng, Lucy

PB - SPIE

T2 - Infrared Technology and Applications XLVI 2020

Y2 - 27 April 2020 through 8 May 2020

ER -

Sb-based third generation at Center for Quantum Devices

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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