Sb-based third generation at Center for Quantum Devices

Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Sb-based III-V semiconductors are a promising alternative to HgCdTe. They can be produced with a similar bandgap to HgCdTe, but take advantage of the strong bonding between group III and group V elements which leads to very stable materials, good radiation hardness, and high uniformity. In this paper, we will discuss the recent progress of our research and present the main contributions of the Center for Quantum Devices to the Sb-based 3th generation imagers.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XLVI
EditorsBjorn F. Andresen, Gabor F. Fulop, John Lester Miller, Lucy Zheng
PublisherSPIE
ISBN (Electronic)9781510635913
DOIs
StatePublished - 2020
EventInfrared Technology and Applications XLVI 2020 - None, United States
Duration: Apr 27 2020May 8 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11407
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceInfrared Technology and Applications XLVI 2020
CountryUnited States
CityNone
Period4/27/205/8/20

Keywords

  • antimony
  • focal plane array
  • photodetector
  • type-II superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Razeghi, M. (2020). Sb-based third generation at Center for Quantum Devices. In B. F. Andresen, G. F. Fulop, J. L. Miller, & L. Zheng (Eds.), Infrared Technology and Applications XLVI [114070T] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11407). SPIE. https://doi.org/10.1117/12.2564813