Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers

D. J. Rogers, S. Sundaram, Y. El Gmili, F. Hosseini Teherani, P. Bove, V. Sandana, P. L. Voss, A. Ougazzaden, A. Rajan, K. A. Prior, R. McClintock, M. Razeghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

(In)GaN p-i-n structures were grown by MOVPE on both GaN- and ZnO-coated c-sapphire substrates. XRD studies of the as-grown layers revealed that a strongly c-axis oriented wurtzite crystal structure was obtained on both templates and that there was a slight compressive strain in the ZnO underlayer which increased after GaN overgrowth. The InGaN peak position gave an estimate of 13.6at% for the indium content in the active layer. SEM and AFM revealed that the top surface morphologies were similar for both substrates, with an RMS roughness (5 μm x 5 μm) of about 10 nm. Granularity appeared slightly coarser (40nm for the device grown on ZnO vs 30nm for the device grown on the GaN template) however. CL revealed a weaker GaN near band edge UV emission peak and a stronger broad defect-related visible emission band for the structure grown on the GaN template. Only a strong ZnO NBE UV emission was observed for the sample grown on the ZnO template. Quarter-wafer chemical lift-off (CLO) of the InGaN-based p-i-n structures from the sapphire substrate was achieved by temporary-bonding the GaN surface to rigid glass support with wax and then selectively dissolving the ZnO in 0.1M HCl. XRD studies revealed that the epitaxial nature and strong preferential c-axis orientation of the layers had been maintained after lift-off. This demonstration of CLO scale-up, without compromising the crystallographic integrity of the (In)GaN p-i-n structure opens up the perspective of transferring GaN based devices off of sapphire substrates industrially.

Original languageEnglish (US)
Title of host publicationOxide-Based Materials and Devices VI
EditorsFerechteh H. Teherani, David C. Look, David J. Rogers
PublisherSPIE
ISBN (Electronic)9781628414547
DOIs
StatePublished - Jan 1 2015
EventOxide-Based Materials and Devices VI - San Francisco, United States
Duration: Feb 8 2015Feb 11 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9364
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherOxide-Based Materials and Devices VI
CountryUnited States
CitySan Francisco
Period2/8/152/11/15

Keywords

  • (In)GaN p-i-n
  • LED
  • ZnO
  • chemical lift-off
  • photovoltaic
  • scale-up
  • substrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Rogers, D. J., Sundaram, S., El Gmili, Y., Teherani, F. H., Bove, P., Sandana, V., Voss, P. L., Ougazzaden, A., Rajan, A., Prior, K. A., McClintock, R., & Razeghi, M. (2015). Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers. In F. H. Teherani, D. C. Look, & D. J. Rogers (Eds.), Oxide-Based Materials and Devices VI [936424] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9364). SPIE. https://doi.org/10.1117/12.2175897