Scaled single‐zeta basis set for use with a silicon effective potential: Generalized valence bond description of disilane

Jules W. Moskowitz*, Sid Topiol, Lawrence C. Snyder, Mark A. Ratner

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A compact and efficient scaled single‐zeta basis set has been developed for use in conjunction with the coreless Hartree–Fock silicon effective potential. The scale factors were determined by minimizing the electronic energy of the disilane molecule. Based upon a generalized valence bond computation using this basis, we conclude that the classical concept of localized σ bonds is adequate to fully explain the electronic structure of disilane in analogy to the ethane molecule.

Original languageEnglish (US)
Pages (from-to)131-137
Number of pages7
JournalInternational Journal of Quantum Chemistry
Volume19
Issue number1
DOIs
StatePublished - Jan 1981

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

Fingerprint

Dive into the research topics of 'Scaled single‐zeta basis set for use with a silicon effective potential: Generalized valence bond description of disilane'. Together they form a unique fingerprint.

Cite this