Scanning tunneling microscopy of defect states in the semiconductor (formula presented)

S. Urazhdin, D. Bilc, S. H. Tessmer, S. D. Mahanti, Theodora Kyratsi, M. G. Kanatzidis

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Scanning tunneling spectroscopy images of (formula presented) doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model, we show that the geometry of the defect states in (formula presented) can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experimentally observed. We show that this effect can be explained by the interplay of defect and surface electronic structure.

Original languageEnglish (US)
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
StatePublished - 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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