Scanning tunneling microscopy of Si/SiO2 interface roughness and its dependence on growth conditions

G. S. Shekhawat*, Ram P. Gupta, S. S. Shekhawat, D. P. Runthala, P. D. Vyas, P. Srivastava, S. Venkatesh, K. Mamhoud, K. B. Garg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The interface between silicon (100) and thermal silicon dioxide grown by wet, dry, and trichloroethylene oxidation has been investigated by scanning tunneling microscopy and scanning tunneling spectroscopy. The scanning tunneling microscopy images of the silicon surface, after removal of oxide, reveal the presence of silicon bumps (protrusions) in samples prepared by wet and dry oxidation while no protrusions are seen at the interface of trichloroethylene oxidized samples. The spectroscopic measurements predict that these are silicon protrusions and are produced by oxide growth conditions. X-ray photon spectroscopy on samples containing protrusions also supports the above prediction. Thus, our study suggests that roughness of the silicon-silicon dioxide interface depends on oxide growth conditions and a relatively smooth interface is obtained by tricholoroethylene oxidation.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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