Scanning tunneling optical spectroscopy of InAsP/InP quantum well structures

L. Q. Qian*, Bruce W Wessels

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A scanning tunneling microscope combined with an optical probe was used to determine the electronic and optical properties of InAsxP1-x/InP quantum well structures. The measured optical spectra at 295 K exhibit well resolved transitions attributable to interband transitions involving the heavy hole valence band and the n = 1 conduction sub-band. The observed transition energies are in good agreement with values measured using conventional photoconductivity and photoluminescence spectroscopy on the same samples. The potential of this technique for the local determination of the electronic and optical properties of semiconductor nanostructures is considered.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Inst of Physics Publ Ltd
Pages569-572
Number of pages4
Edition117
ISBN (Print)0854984062
StatePublished - Dec 1 1991
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: Mar 25 1991Mar 28 1991

Publication series

NameInstitute of Physics Conference Series
Number117
ISSN (Print)0373-0751

Other

OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl
Period3/25/913/28/91

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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