Scanning tunneling optical spectroscopy of semiconductor quantum well structures

L. Q. Qian*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Scanning tunneling optical spectroscopy has been used to determine the optical properties of semiconductor quantum wells. With this technique, photoenhanced tunneling currents are measured with a scanning tunneling microscope on heterostructures illuminated with monochromatic light. For the InAsxP1-x/InP strained single quantum well structures, the 295 K spectra exhibit well-resolved transitions attributable to interband transitions involving the heavy-hole valence band and the n=1 conduction subband. The observed transition energies are in good agreement with values measured using photoconductivity and photoluminescence spectroscopy on the same samples.

Original languageEnglish (US)
Pages (from-to)2538-2539
Number of pages2
JournalApplied Physics Letters
Volume58
Issue number22
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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