Abstract
Scanning tunneling optical spectroscopy has been used to determine the optical properties of semiconductor quantum wells. With this technique, photoenhanced tunneling currents are measured with a scanning tunneling microscope on heterostructures illuminated with monochromatic light. For the InAsxP1-x/InP strained single quantum well structures, the 295 K spectra exhibit well-resolved transitions attributable to interband transitions involving the heavy-hole valence band and the n=1 conduction subband. The observed transition energies are in good agreement with values measured using photoconductivity and photoluminescence spectroscopy on the same samples.
Original language | English (US) |
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Pages (from-to) | 2538-2539 |
Number of pages | 2 |
Journal | Applied Physics Letters |
Volume | 58 |
Issue number | 22 |
DOIs | |
State | Published - 1991 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)