Abstract
Scanning tunneling optical spectroscopy is used to study the sirfaces of semiconductors. The mechanisms for the interaction between light and the tunnel junction are assessed. Measurements of optical transitions in quantum well structures were conducted and the results are found to agree with theoretical calculations.
Original language | English (US) |
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Pages (from-to) | 1803-1806 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 10 |
Issue number | 4 |
DOIs | |
State | Published - Jul 1992 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering