Scanning tunneling optical spectroscopy of semiconductors

L. Q. Qian*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Photoenhanced tunneling currents are measured with a scanning tunneling microscope (STM) for semiconductors illuminated with monochromatic light. The spectral response of the STM tunnel junction was measured over the spectral range of 0.8-1.5 eV. Optical spectra for p-type (111)Si, epitaxial n-type (100)InP, and p-type (100)GaAs were obtained.

Original languageEnglish (US)
Pages (from-to)1295-1296
Number of pages2
JournalApplied Physics Letters
Volume58
Issue number12
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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