Schottky barrier height in GaN/Al junctions: An ab-initio study

S. Picozzi*, A. Continenza, S. Massidda, A. J. Freeman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We performed ab-initio full-potential linearized augmented plane wave (FLAPW) calculations for [0001]-wurtzite and [111]-zincblende GaN/Al junctions, focusing on the Schottky barrier height. We propose a procedure to evaluate the potential discontinuity in the presence of electric fields, showing that their effect is relatively small (a few tenths of an eV). These calculations assess the rectifying behaviour of the GaN/Al contact, in agreement with experimental values for the barrier.

Original languageEnglish (US)
Pages (from-to)257-262
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume190
Issue number1
DOIs
StatePublished - Jan 1 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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