We performed ab-initio full-potential linearized augmented plane wave (FLAPW) calculations for -wurtzite and -zincblende GaN/Al junctions, focusing on the Schottky barrier height. We propose a procedure to evaluate the potential discontinuity in the presence of electric fields, showing that their effect is relatively small (a few tenths of an eV). These calculations assess the rectifying behaviour of the GaN/Al contact, in agreement with experimental values for the barrier.
|Original language||English (US)|
|Number of pages||6|
|Journal||Physica Status Solidi (A) Applied Research|
|State||Published - Jan 1 2002|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics