Schottky barrier height in GaN/Al junctions: An ab-initio study

S. Picozzi; A. Continenza; S. Massidda; A. J. Freeman

doi:10.1002/1521-396X(200203)190:1<257::AID-PSSA257>3.0.CO;2-I

Schottky barrier height in GaN/Al junctions: An ab-initio study

S. Picozzi^*, A. Continenza, S. Massidda, A. J. Freeman

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

We performed ab-initio full-potential linearized augmented plane wave (FLAPW) calculations for [0001]-wurtzite and [111]-zincblende GaN/Al junctions, focusing on the Schottky barrier height. We propose a procedure to evaluate the potential discontinuity in the presence of electric fields, showing that their effect is relatively small (a few tenths of an eV). These calculations assess the rectifying behaviour of the GaN/Al contact, in agreement with experimental values for the barrier.

Original language	English (US)
Pages (from-to)	257-262
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	190
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200203)190:1<257::AID-PSSA257>3.0.CO;2-I
State	Published - Mar 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-396X(200203)190:1<257::AID-PSSA257>3.0.CO;2-I

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AU - Freeman, A. J.

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AB - We performed ab-initio full-potential linearized augmented plane wave (FLAPW) calculations for [0001]-wurtzite and [111]-zincblende GaN/Al junctions, focusing on the Schottky barrier height. We propose a procedure to evaluate the potential discontinuity in the presence of electric fields, showing that their effect is relatively small (a few tenths of an eV). These calculations assess the rectifying behaviour of the GaN/Al contact, in agreement with experimental values for the barrier.

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Schottky barrier height in GaN/Al junctions: An ab-initio study

Abstract

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