Abstract
The Schottky barrier heights of Au/In1-xGaxAs1-yPy contacts have been determined as a function of y by the capacitance-voltage and temperature dependent current-voltage characteristics measurements. The barrier height is observed to increase as y is increased for both n- and p-type materials, with a more rapid increase for the p-type material. The compositional variation of the barrier heights for Au/n-In1-xGaxAs1-yPy. is found to be identical to that of the conduction-band offsets in In1-xGaxAs1-yPy/GaAs heterojunctions. A possible cause of this phenomenon is also discussed.
Original language | English (US) |
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Pages (from-to) | 912-914 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 71 |
Issue number | 7 |
DOIs | |
State | Published - Aug 18 1997 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)