Schottky barrier heights and conduction-band offsets of In1-xGaAs1-yPy lattice matched to GaAs

Jong Kwon Lee*, Yong Hoon Cho, Byung Doo Choe, K. S. Kim, H. I. Jeon, H. Lim, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The Schottky barrier heights of Au/In1-xGaxAs1-yPy contacts have been determined as a function of y by the capacitance-voltage and temperature dependent current-voltage characteristics measurements. The barrier height is observed to increase as y is increased for both n- and p-type materials, with a more rapid increase for the p-type material. The compositional variation of the barrier heights for Au/n-In1-xGaxAs1-yPy. is found to be identical to that of the conduction-band offsets in In1-xGaxAs1-yPy/GaAs heterojunctions. A possible cause of this phenomenon is also discussed.

Original languageEnglish (US)
Pages (from-to)912-914
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number7
DOIs
StatePublished - Aug 18 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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