The Schottky barrier heights of Au/In1-xGaxAs1-yPy contacts have been determined as a function of y by the capacitance-voltage and temperature dependent current-voltage characteristics measurements. The barrier height is observed to increase as y is increased for both n- and p-type materials, with a more rapid increase for the p-type material. The compositional variation of the barrier heights for Au/n-In1-xGaxAs1-yPy. is found to be identical to that of the conduction-band offsets in In1-xGaxAs1-yPy/GaAs heterojunctions. A possible cause of this phenomenon is also discussed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)