@article{1e391485270a436ab9d43638236f2c94,
title = "Schottky-quantum dot photovoltaics for efficient infrared power conversion",
abstract = "Planar Schottky photovoltaic devices were prepared from solution-processed PbS nanocrystal quantum dot films with aluminum and indium tin oxide contacts. These devices exhibited up to 4.2% infrared power conversion efficiency, which is a threefold improvement over previous results. Solar power conversion efficiency reached 1.8%. The simple, optimized architecture allows for direct implementation in multijunction photovoltaic device configurations.",
author = "Johnston, {Keith W.} and Pattantyus-Abraham, {Andras G.} and Clifford, {Jason P.} and Myrskog, {Stefan H.} and MacNeil, {Dean D.} and Larissa Levina and Sargent, {Edward H.}",
note = "Funding Information: The authors thank S. Hinds, E. Klem, G. Koleilat, G. Konstantatos, H. Shukla, and L. Soleymani for many helpful discussions and the Advanced Photovoltaics and Devices Group at the University of Toronto for the a-Si sample. This research was supported by the Natural Sciences and Engineering Research Council of Canada.",
year = "2008",
doi = "10.1063/1.2912340",
language = "English (US)",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",
}
