Second harmonic generation in hexagonal SiC

Paul M. Lundquist*, Weiping Lin, George K. Wong, Manijeh Razeghi, John B Ketterson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report optical second harmonic generation measurements in single crystal α-SiC of polytype 6H. The sample was found to be optically uniaxial, consistent with the hexagonal symmetry of the crystal structure. The two independent components of the second order electric susceptibility tensor were determined to be d33 = 43 pm/V and d 31 = -4.3 pm/V. From this data the principle electro-optic coefficient was computed to be r33 = 100 pm/V. The corresponding figures of merit for nonlinear optical device operation compare favorably with leading materials such as lithium niobate and KTP, and thus the relatively convenient and inexpensive fabrication of 6H SiC thin films could prove useful for integrated optical devices.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGregory J. Quarles, Leon Esterowitz, Lap K. Cheng
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages407-414
Number of pages8
Volume2379
ISBN (Print)0819417262
StatePublished - Jan 1 1995
EventSolid State Lasers and Nonlinear Crystals - San Jose, CA, USA
Duration: Feb 5 1995Feb 7 1995

Other

OtherSolid State Lasers and Nonlinear Crystals
CitySan Jose, CA, USA
Period2/5/952/7/95

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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    Lundquist, P. M., Lin, W., Wong, G. K., Razeghi, M., & Ketterson, J. B. (1995). Second harmonic generation in hexagonal SiC. In G. J. Quarles, L. Esterowitz, & L. K. Cheng (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2379, pp. 407-414). Society of Photo-Optical Instrumentation Engineers.