Second harmonic generation in hexagonal silicon carbide

P. M. Lundquist, W. P. Lin, G. K. Wong, Manijeh Razeghi, John B Ketterson

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

We report optical second harmonic generation measurements in single crystal α�SiC of polytype 6H. The angular dependence of second harmonic intensity was consistent with two independent nonvanishing second order susceptibility components, as expected for a crystal with hexagonal symmetry. For the fundamental wavelength of 1.064 μm the magnitudes of the two components were determined to be χzzz (2)=±1.2×10−7 and χzxx (2)=∓1.2×10−8 esu. The corresponding linear electro�optic coefficient computed from this value is rzzz=±100 pm/V. The wavelength dependence of the nonlinear susceptibility was examined for second harmonic wavelengths between the bandgap (400 nm) and the red (700 nm), and was found to be relatively uniform over this region. The refractory nature of this compound and its large nonlinear optical coefficients make it an attractive candidate for high power nonlinear optical waveguide applications.

Original languageEnglish (US)
Pages (from-to)1883-1885
Number of pages3
JournalApplied Physics Letters
Volume66
Issue number15
DOIs
StatePublished - Apr 10 1995

Keywords

  • ELECTRO−OPTICAL EFFECTS
  • HEXAGONAL LATTICES
  • MONOCRYSTALS
  • NONLINEAR OPTICS
  • OPTICAL SUSCEPTIBILITY
  • SECOND HARMONIC GENERATION
  • SILICON CARBIDES

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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