Second order optical nonlinearities of radio frequency sputter-deposited AlN thin films

W. P. Lin*, P. M. Lundquist, G. K. Wong, E. D. Rippert, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

Polarized second harmonic generation measurements were performed on AlN films deposited on (100) sapphire substrates by the reactive rf sputtering technique. The bulk effective second order nonlinearity observed in these films is typically about 6×10-9 esu at 1.06 μm, several times larger than that of quartz or KTP. The tensorial properties of the nonlinearity are consistent with the crystal symmetry of AlN and the microcrystallinity of these films.

Original languageEnglish (US)
Pages (from-to)2875-2877
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number21
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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