Second order optical nonlinearities of radio frequency sputter-deposited AlN thin films

W. P. Lin; P. M. Lundquist; G. K. Wong; E. D. Rippert; J. B. Ketterson

doi:10.1063/1.110311

Second order optical nonlinearities of radio frequency sputter-deposited AlN thin films

W. P. Lin^*, P. M. Lundquist, G. K. Wong, E. D. Rippert, J. B. Ketterson

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Polarized second harmonic generation measurements were performed on AlN films deposited on (100) sapphire substrates by the reactive rf sputtering technique. The bulk effective second order nonlinearity observed in these films is typically about 6×10^-9 esu at 1.06 μm, several times larger than that of quartz or KTP. The tensorial properties of the nonlinearity are consistent with the crystal symmetry of AlN and the microcrystallinity of these films.

Original language	English (US)
Pages (from-to)	2875-2877
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	21
DOIs	https://doi.org/10.1063/1.110311
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Second order optical nonlinearities of radio frequency sputter-deposited AlN thin films",

abstract = "Polarized second harmonic generation measurements were performed on AlN films deposited on (100) sapphire substrates by the reactive rf sputtering technique. The bulk effective second order nonlinearity observed in these films is typically about 6×10-9 esu at 1.06 μm, several times larger than that of quartz or KTP. The tensorial properties of the nonlinearity are consistent with the crystal symmetry of AlN and the microcrystallinity of these films.",

author = "Lin, {W. P.} and Lundquist, {P. M.} and Wong, {G. K.} and Rippert, {E. D.} and Ketterson, {J. B.}",

year = "1993",

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language = "English (US)",

volume = "63",

pages = "2875--2877",

journal = "Applied Physics Letters",

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T1 - Second order optical nonlinearities of radio frequency sputter-deposited AlN thin films

AU - Lin, W. P.

AU - Lundquist, P. M.

AU - Wong, G. K.

AU - Rippert, E. D.

AU - Ketterson, J. B.

PY - 1993

Y1 - 1993

N2 - Polarized second harmonic generation measurements were performed on AlN films deposited on (100) sapphire substrates by the reactive rf sputtering technique. The bulk effective second order nonlinearity observed in these films is typically about 6×10-9 esu at 1.06 μm, several times larger than that of quartz or KTP. The tensorial properties of the nonlinearity are consistent with the crystal symmetry of AlN and the microcrystallinity of these films.

AB - Polarized second harmonic generation measurements were performed on AlN films deposited on (100) sapphire substrates by the reactive rf sputtering technique. The bulk effective second order nonlinearity observed in these films is typically about 6×10-9 esu at 1.06 μm, several times larger than that of quartz or KTP. The tensorial properties of the nonlinearity are consistent with the crystal symmetry of AlN and the microcrystallinity of these films.

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Second order optical nonlinearities of radio frequency sputter-deposited AlN thin films

Abstract

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