TY - JOUR
T1 - Selecting Semiconducting Single-Walled Carbon Nanotubes with Narrow Bandgap Naphthalene Diimide-Based Polymers
AU - Salazar-Rios, Jorge Mario
AU - Gomulya, Widianta
AU - Derenskyi, Vladimir
AU - Yang, Jie
AU - Bisri, Satria Zulkarnaen
AU - Chen, Zhihua
AU - Facchetti, Antonio
AU - Loi, Maria Antonietta
N1 - Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2015/8
Y1 - 2015/8
N2 - Noncovalent functionalization of carbon nanotubes by wrapping them using π-conjugated polymers is one of the most promising techniques to sort, separate, and purify semiconducting nanotube species for applications in optoelectronic devices. However, wide energy bandgap polymers commonly used in this technique reduce charge transport through the nanotube network. To avoid the formation of insulating barriers between the tubes, challenging procedures for the removal of the polymer from the nanotube walls are necessary. Here, the use of two narrow bandgap polymers based on naphthalene-bis(dicarboximide) (NDI), namely, poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bithiophene)}, (P(NDI2OD-T2 or ActivInk N2200) and its molecular cousin, poly{[(N,N′-bis(2-octyldodecyl)-1,4,5,8-naphthalenedicarboximide-2,6-diyl)-alt-5,5′-(2,2′-bithiophene)]-co-[(N,N′-bis(2-octyldodecyl)-1,4,5,8-naphthalenedicarboximide-2,6-diyl)-alt-5,5′-(2,2′-(4,4′-dimethoxybithiophene))]}(ActivInk PE-N-73), for selecting semiconducting single-walled carbon nanotubes (s-SWNTs) is demonstrated. The influence of the chemical structure of these polymers on the nanotube selectivity, as well as the effect of residual excess polymer and their band-gaps, are investigated through optical spectroscopy and charge transport measurements. While the electron transport of the devices fabricated with PE-N-73 and N2200 wrapped SWNTs is comparable, a substantial difference is observed in the hole transport. The better alignment of the HOMO level of PE-N-73 with that of the nanotubes allows achieving improved p-type characteristics even with a large amount of residual polymer in the network.
AB - Noncovalent functionalization of carbon nanotubes by wrapping them using π-conjugated polymers is one of the most promising techniques to sort, separate, and purify semiconducting nanotube species for applications in optoelectronic devices. However, wide energy bandgap polymers commonly used in this technique reduce charge transport through the nanotube network. To avoid the formation of insulating barriers between the tubes, challenging procedures for the removal of the polymer from the nanotube walls are necessary. Here, the use of two narrow bandgap polymers based on naphthalene-bis(dicarboximide) (NDI), namely, poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bithiophene)}, (P(NDI2OD-T2 or ActivInk N2200) and its molecular cousin, poly{[(N,N′-bis(2-octyldodecyl)-1,4,5,8-naphthalenedicarboximide-2,6-diyl)-alt-5,5′-(2,2′-bithiophene)]-co-[(N,N′-bis(2-octyldodecyl)-1,4,5,8-naphthalenedicarboximide-2,6-diyl)-alt-5,5′-(2,2′-(4,4′-dimethoxybithiophene))]}(ActivInk PE-N-73), for selecting semiconducting single-walled carbon nanotubes (s-SWNTs) is demonstrated. The influence of the chemical structure of these polymers on the nanotube selectivity, as well as the effect of residual excess polymer and their band-gaps, are investigated through optical spectroscopy and charge transport measurements. While the electron transport of the devices fabricated with PE-N-73 and N2200 wrapped SWNTs is comparable, a substantial difference is observed in the hole transport. The better alignment of the HOMO level of PE-N-73 with that of the nanotubes allows achieving improved p-type characteristics even with a large amount of residual polymer in the network.
KW - field effect transistors
KW - naphthalene diimide-based polymers
KW - polymer wrapping
KW - single walled nanotubes
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U2 - 10.1002/aelm.201500074
DO - 10.1002/aelm.201500074
M3 - Article
AN - SCOPUS:84977104349
SN - 2199-160X
VL - 1
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 8
M1 - 1500074
ER -