SELECTIVE PLASMA OXIDATION OF GaAs - A STUDY OF THE INTERFACE PROPERTIES.

R. P H Chang

SELECTIVE PLASMA OXIDATION OF GaAs - A STUDY OF THE INTERFACE PROPERTIES.

R. P H Chang^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide - GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.

Original language	English (US)
Pages (from-to)	483-448
Number of pages	36
Journal	Proceedings of the Conference on Solid State Devices
State	Published - Jan 1 1980

ASJC Scopus subject areas

Engineering(all)

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@article{563585a051d34e46a8a35f0bd4718580,

title = "SELECTIVE PLASMA OXIDATION OF GaAs - A STUDY OF THE INTERFACE PROPERTIES.",

abstract = "Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide - GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.",

author = "Chang, {R. P H}",

year = "1980",

month = jan,

day = "1",

language = "English (US)",

pages = "483--448",

journal = "Proceedings of the Conference on Solid State Devices",

}

TY - JOUR

T1 - SELECTIVE PLASMA OXIDATION OF GaAs - A STUDY OF THE INTERFACE PROPERTIES.

AU - Chang, R. P H

PY - 1980/1/1

Y1 - 1980/1/1

N2 - Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide - GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.

AB - Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide - GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.

UR - http://www.scopus.com/inward/record.url?scp=0019269169&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019269169&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0019269169

SP - 483

EP - 448

JO - Proceedings of the Conference on Solid State Devices

JF - Proceedings of the Conference on Solid State Devices

ER -