Abstract
Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide - GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.
Original language | English (US) |
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Pages (from-to) | 483-448 |
Number of pages | 36 |
Journal | Proceedings of the Conference on Solid State Devices |
State | Published - Jan 1 1980 |
ASJC Scopus subject areas
- Engineering(all)