Selective plasma oxidation of GaAs—a study of the interface properties

R. P H Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide—GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.

Original languageEnglish (US)
Pages (from-to)483-487
Number of pages5
JournalJapanese Journal of Applied Physics
StatePublished - Jan 1980

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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