Self-aligned van der waals heterojunction diodes and transistors

Vinod K. Sangwan, Megan E. Beck, Alex Henning, Jiajia Luo, Hadallia Bergeron, Junmo Kang, Itamar Balla, Hadass Inbar, Lincoln J. Lauhon, Mark C. Hersam*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of anti-ambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated anti-ambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries.

Original languageEnglish (US)
JournalUnknown Journal
StatePublished - Feb 3 2018

Keywords

  • 2D material
  • Anti-ambipolar
  • Self-aligned
  • Source-gated transistor
  • Van der Waals heterojunction

ASJC Scopus subject areas

  • General

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