Self-Assembled Nanodielectrics for High-Speed, Low-Voltage Solution-Processed Polymer Logic Circuits

Satyaprasad P. Senanayak, Vinod K. Sangwan, Julian J. McMorrow, Ken Everaerts, Zhihua Chen, Antonio Facchetti*, Mark C. Hersam, Tobin J. Marks, K. S. Narayan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


Solution-processed polymer-based logic circuits are typically associated with high operating voltage and slow switching speeds. Here, polymer field-effect transistors (PFETs) fabricated on hybrid self-assembled nanodielectric (SAND) structures are reported, the latter consisting of alternating organic–inorganic layers exhibiting low leakage current (≈10−9 A cm−2) and high capacitance (≈0.8 μF cm−2). Suitable device engineering, controllable dielectric parameters, and interface energetics enable PFET operation at ±1 V, field-effect mobility (μ FET) > 2.0 cm2 V−1 s−1, subthreshold swing ≈100 mV dec−1, and switching response ≈150 ns. These performance parameters are orders of magnitude higher than similar devices fabricated from other polymer dielectrics. Inverter and NAND logic circuits fabricated from these SAND-based PFETs possess voltage gain up to 38 and maximum-frequency bandwidth of 2 MHz. A systematic study comparing different classes of dielectric and semiconducting material attributes the enhanced performance to improved relaxation dynamics of the SAND layer and tunable chemically functionalized interfaces.

Original languageEnglish (US)
Article number1500226
JournalAdvanced Electronic Materials
Issue number12
StatePublished - Dec 1 2015


  • 1 V transistors
  • nanosecond switching
  • polymer logic circuits
  • self-assembled nanodielectrics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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