TY - JOUR
T1 - Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors
AU - Stallings, Katie
AU - Smith, Jeremy
AU - Chen, Yao
AU - Zeng, Li
AU - Wang, Binghao
AU - Di Carlo, Gabriele
AU - Bedzyk, Michael J.
AU - Facchetti, Antonio
AU - Marks, Tobin J.
N1 - Funding Information:
The authors acknowledge support from AFOSR (grant FA9550-18-1-0320), the Northwestern University MRSEC (NSF grant DMR-1720139), and an earlier ONR MURI grant N00014-11-1-0690. This work utilized the Northwestern University Micro/Nano Fabrication Facility (NUFAB) and XRD Facility, which is partially supported by the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), the Materials Research Science and Engineering Center (DMR-1720139), the State of Illinois, and Northwestern University.
Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/4/7
Y1 - 2021/4/7
N2 - Metal oxide semiconductors, such as amorphous indium gallium zinc oxide (a-IGZO), have made impressive strides as alternatives to amorphous silicon for electronics applications. However, to achieve the full potential of these semiconductors, compatible unconventional gate dielectric materials must also be developed. To this end, solution-processable self-assembled nanodielectrics (SANDs) composed of structurally well-defined and durable nanoscopic alternating organic (e.g., stilbazolium) and inorganic oxide (e.g., ZrOx and HfOx) layers offer impressive capacitances and low processing temperatures (T ≤ 200 °C). While SANDs have been paired with diverse semiconductors and have yielded excellent device metrics, they have never been implemented in the most technologically relevant top-gate thin-film transistor (TFT) architecture. Here, we combine solution-processed a-IGZO with solution-processed four-layer Hf-SAND to fabricate top-gate TFTs, which exhibit impressive electron mobilities (μSAT = 19.4 cm2 V-1 s-1) and low threshold voltages (Vth = 0.83 V), subthreshold slopes (SS = 293 mV/dec), and gate leakage currents (10-10 A) as well as high bias stress stability.
AB - Metal oxide semiconductors, such as amorphous indium gallium zinc oxide (a-IGZO), have made impressive strides as alternatives to amorphous silicon for electronics applications. However, to achieve the full potential of these semiconductors, compatible unconventional gate dielectric materials must also be developed. To this end, solution-processable self-assembled nanodielectrics (SANDs) composed of structurally well-defined and durable nanoscopic alternating organic (e.g., stilbazolium) and inorganic oxide (e.g., ZrOx and HfOx) layers offer impressive capacitances and low processing temperatures (T ≤ 200 °C). While SANDs have been paired with diverse semiconductors and have yielded excellent device metrics, they have never been implemented in the most technologically relevant top-gate thin-film transistor (TFT) architecture. Here, we combine solution-processed a-IGZO with solution-processed four-layer Hf-SAND to fabricate top-gate TFTs, which exhibit impressive electron mobilities (μSAT = 19.4 cm2 V-1 s-1) and low threshold voltages (Vth = 0.83 V), subthreshold slopes (SS = 293 mV/dec), and gate leakage currents (10-10 A) as well as high bias stress stability.
KW - amorphous IGZO
KW - hybrid dielectrics
KW - low-voltage electronics
KW - solution-processing
KW - top-gate thin-film transistor
KW - unconventional electronics
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U2 - 10.1021/acsami.1c00249
DO - 10.1021/acsami.1c00249
M3 - Article
C2 - 33779161
AN - SCOPUS:85104047984
VL - 13
SP - 15399
EP - 15408
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 13
ER -