Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors

Katie Stallings; Jeremy Smith; Yao Chen; Li Zeng; Binghao Wang; Gabriele Di Carlo; Michael J. Bedzyk; Antonio F Facchetti; Tobin J. Marks

doi:10.1021/acsami.1c00249

Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors

Katie Stallings, Jeremy Smith, Yao Chen, Li Zeng, Binghao Wang, Gabriele Di Carlo, Michael J. Bedzyk, Antonio F Facchetti^*, Tobin J. Marks^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Metal oxide semiconductors, such as amorphous indium gallium zinc oxide (a-IGZO), have made impressive strides as alternatives to amorphous silicon for electronics applications. However, to achieve the full potential of these semiconductors, compatible unconventional gate dielectric materials must also be developed. To this end, solution-processable self-assembled nanodielectrics (SANDs) composed of structurally well-defined and durable nanoscopic alternating organic (e.g., stilbazolium) and inorganic oxide (e.g., ZrOx and HfOx) layers offer impressive capacitances and low processing temperatures (T ≤ 200 °C). While SANDs have been paired with diverse semiconductors and have yielded excellent device metrics, they have never been implemented in the most technologically relevant top-gate thin-film transistor (TFT) architecture. Here, we combine solution-processed a-IGZO with solution-processed four-layer Hf-SAND to fabricate top-gate TFTs, which exhibit impressive electron mobilities (μSAT = 19.4 cm2 V-1 s-1) and low threshold voltages (Vth = 0.83 V), subthreshold slopes (SS = 293 mV/dec), and gate leakage currents (10-10 A) as well as high bias stress stability.

Original language	English (US)
Pages (from-to)	15399-15408
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	13
Issue number	13
DOIs	https://doi.org/10.1021/acsami.1c00249
State	Published - Apr 7 2021

Funding

The authors acknowledge support from AFOSR (grant FA9550-18-1-0320), the Northwestern University MRSEC (NSF grant DMR-1720139), and an earlier ONR MURI grant N00014-11-1-0690. This work utilized the Northwestern University Micro/Nano Fabrication Facility (NUFAB) and XRD Facility, which is partially supported by the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), the Materials Research Science and Engineering Center (DMR-1720139), the State of Illinois, and Northwestern University.

Keywords

amorphous IGZO
hybrid dielectrics
low-voltage electronics
solution-processing
top-gate thin-film transistor
unconventional electronics

ASJC Scopus subject areas

General Materials Science

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10.1021/acsami.1c00249

Cite this

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title = "Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors",

abstract = "Metal oxide semiconductors, such as amorphous indium gallium zinc oxide (a-IGZO), have made impressive strides as alternatives to amorphous silicon for electronics applications. However, to achieve the full potential of these semiconductors, compatible unconventional gate dielectric materials must also be developed. To this end, solution-processable self-assembled nanodielectrics (SANDs) composed of structurally well-defined and durable nanoscopic alternating organic (e.g., stilbazolium) and inorganic oxide (e.g., ZrOx and HfOx) layers offer impressive capacitances and low processing temperatures (T ≤ 200 °C). While SANDs have been paired with diverse semiconductors and have yielded excellent device metrics, they have never been implemented in the most technologically relevant top-gate thin-film transistor (TFT) architecture. Here, we combine solution-processed a-IGZO with solution-processed four-layer Hf-SAND to fabricate top-gate TFTs, which exhibit impressive electron mobilities (μSAT = 19.4 cm2 V-1 s-1) and low threshold voltages (Vth = 0.83 V), subthreshold slopes (SS = 293 mV/dec), and gate leakage currents (10-10 A) as well as high bias stress stability.",

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author = "Katie Stallings and Jeremy Smith and Yao Chen and Li Zeng and Binghao Wang and {Di Carlo}, Gabriele and Bedzyk, {Michael J.} and Facchetti, {Antonio F} and Marks, {Tobin J.}",

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AU - Wang, Binghao

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AU - Facchetti, Antonio F

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Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors

Abstract

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