Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

Y. Huang*, D. J H Cockayne, C. Marsh, J. M. Titchmarsh, A. K. Petford-Long

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga + ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Original languageEnglish (US)
Pages (from-to)1954-1958
Number of pages5
JournalApplied Surface Science
Issue number5
StatePublished - Dec 15 2005


  • Amorphous silicon
  • Focused ion beam (FIB)
  • TEM

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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