Semiconductor nanowire heterostructures

L. J. Lauhon*, Mark S. Gudiksen, Charles M. Lieber

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

223 Scopus citations

Abstract

Recent progress on the synthesis and characterization of semiconductor nanowire heterostructures is reviewed. We describe a general method for heterostructure synthesis based on chemical vapour deposition and the vapour-liquid-solid growth of crystalline semiconducting nanowires. We then examine examples of nanowire heterostructures for which physical properties have been measured, considering the effects of synthetic conditions on the heterointerfaces as well as the electrical and optical characterization measurements that reveal heterointerface formation and quality. Finally, we identify areas of technical and conceptual progress that can contribute to the development of functional nanowire heterostructures.

Original languageEnglish (US)
Pages (from-to)1247-1260
Number of pages14
JournalPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
Volume362
Issue number1819
DOIs
StatePublished - Jun 15 2004

Keywords

  • Chemical vapour deposition
  • Heterostructure
  • Nanotechnology
  • Nanowire
  • Semiconductor
  • Synthesis

ASJC Scopus subject areas

  • Mathematics(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Semiconductor nanowire heterostructures'. Together they form a unique fingerprint.

Cite this