Abstract
Highly pure, ultralong, and uniform-sized semiconductor nanowires in bulk quantity were synthesized by thermal evaporation or laser ablation of semiconductor powders mixed with oxides. Transmission electron microscopy study shows that decomposition of semiconductor suboxides and defect structures play important roles in enhancing the formation and growth of high-quality nanowires. A new growth mechanism is proposed on the basis of microstructure and different morphologies of the nanowires observed.
Original language | English (US) |
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Pages (from-to) | 4503-4507 |
Number of pages | 5 |
Journal | Journal of Materials Research |
Volume | 14 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1999 |
Funding
This work was supported by a Strategic Research Grant of the City University of Hong Kong and the Research Grant Council of Hong Kong.
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering