Semiconductor nanowires from oxides

S. T. Lee*, Y. F. Zhang, N. Wang, Y. H. Tang, I. Bello, C. S. Lee, Y. W. Chung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

159 Scopus citations

Abstract

Highly pure, ultralong, and uniform-sized semiconductor nanowires in bulk quantity were synthesized by thermal evaporation or laser ablation of semiconductor powders mixed with oxides. Transmission electron microscopy study shows that decomposition of semiconductor suboxides and defect structures play important roles in enhancing the formation and growth of high-quality nanowires. A new growth mechanism is proposed on the basis of microstructure and different morphologies of the nanowires observed.

Original languageEnglish (US)
Pages (from-to)4503-4507
Number of pages5
JournalJournal of Materials Research
Volume14
Issue number12
DOIs
StatePublished - Dec 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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