Semiconductor superlattices studied by grazing x-ray scattering and diffraction

Z. H. Ming*, Y. L. Soo, S. Huang, Y. H. Kao, K. Stair, G. Devane, C. Choi-Feng, T. Chang, L. P. Fu, G. D. Gilliland, J. Klem, M. Hafich

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


Semiconductor superlattices have been studied by grazing incidence x-ray scattering and x-ray diffraction. For superlattices of 100-period InGaAs/GaAs, lateral structural ordering has been found to occur in the material. For one particular sample (M1400), periodic thickness modulations have been observed in the InGaAs layers. X-ray results also provide evidence for an improvement of interface quality by using interrupt-growth method for 55-period AlAs/GaAs superlattices grown by MBE.

Original languageEnglish (US)
Pages (from-to)325-330
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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