Semiconductor superlattices studied by grazing x-ray scattering and diffraction

Z. H. Ming; Y. L. Soo; S. Huang; Y. H. Kao; K. Stair; G. Devane; C. Choi-Feng; T. Chang; L. P. Fu; G. D. Gilliland; J. Klem; M. Hafich

Semiconductor superlattices studied by grazing x-ray scattering and diffraction

Z. H. Ming^*, Y. L. Soo, S. Huang, Y. H. Kao, K. Stair, G. Devane, C. Choi-Feng, T. Chang, L. P. Fu, G. D. Gilliland, J. Klem, M. Hafich

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Semiconductor superlattices have been studied by grazing incidence x-ray scattering and x-ray diffraction. For superlattices of 100-period InGaAs/GaAs, lateral structural ordering has been found to occur in the material. For one particular sample (M1400), periodic thickness modulations have been observed in the InGaAs layers. X-ray results also provide evidence for an improvement of interface quality by using interrupt-growth method for 55-period AlAs/GaAs superlattices grown by MBE.

Original language	English (US)
Pages (from-to)	325-330
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	417
State	Published - Jan 1 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{88129c117fb64437b651392b7149234d,

title = "Semiconductor superlattices studied by grazing x-ray scattering and diffraction",

abstract = "Semiconductor superlattices have been studied by grazing incidence x-ray scattering and x-ray diffraction. For superlattices of 100-period InGaAs/GaAs, lateral structural ordering has been found to occur in the material. For one particular sample (M1400), periodic thickness modulations have been observed in the InGaAs layers. X-ray results also provide evidence for an improvement of interface quality by using interrupt-growth method for 55-period AlAs/GaAs superlattices grown by MBE.",

author = "Ming, {Z. H.} and Soo, {Y. L.} and S. Huang and Kao, {Y. H.} and K. Stair and G. Devane and C. Choi-Feng and T. Chang and Fu, {L. P.} and Gilliland, {G. D.} and J. Klem and M. Hafich",

year = "1996",

month = jan,

day = "1",

language = "English (US)",

volume = "417",

pages = "325--330",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

}

TY - JOUR

T1 - Semiconductor superlattices studied by grazing x-ray scattering and diffraction

AU - Ming, Z. H.

AU - Soo, Y. L.

AU - Huang, S.

AU - Kao, Y. H.

AU - Stair, K.

AU - Devane, G.

AU - Choi-Feng, C.

AU - Chang, T.

AU - Fu, L. P.

AU - Gilliland, G. D.

AU - Klem, J.

AU - Hafich, M.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Semiconductor superlattices have been studied by grazing incidence x-ray scattering and x-ray diffraction. For superlattices of 100-period InGaAs/GaAs, lateral structural ordering has been found to occur in the material. For one particular sample (M1400), periodic thickness modulations have been observed in the InGaAs layers. X-ray results also provide evidence for an improvement of interface quality by using interrupt-growth method for 55-period AlAs/GaAs superlattices grown by MBE.

AB - Semiconductor superlattices have been studied by grazing incidence x-ray scattering and x-ray diffraction. For superlattices of 100-period InGaAs/GaAs, lateral structural ordering has been found to occur in the material. For one particular sample (M1400), periodic thickness modulations have been observed in the InGaAs layers. X-ray results also provide evidence for an improvement of interface quality by using interrupt-growth method for 55-period AlAs/GaAs superlattices grown by MBE.

UR - http://www.scopus.com/inward/record.url?scp=0029715152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029715152&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029715152

SN - 0272-9172

VL - 417

SP - 325

EP - 330

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

Semiconductor superlattices studied by grazing x-ray scattering and diffraction

Abstract

ASJC Scopus subject areas

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