Semiconductor ultraviolet detectors

M. Razeghi*, A. Rogalski

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

1197 Scopus citations

Abstract

In this review article a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considerations are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Next, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band-gap semiconductors the most promising of which are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is finally described in detail.

Original languageEnglish (US)
Pages (from-to)7433-7473
Number of pages41
JournalJournal of Applied Physics
Volume79
Issue number10
DOIs
StatePublished - May 15 1996

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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