Semimetal-to-semiconductor transition in bismuth thin films

C. A. Hoffman*, J. R. Meyer, F. J. Bartoli, A. Di Venere, X. J. Yi, C. L. Hou, H. C. Wang, J. B. Ketterson, G. K. Wong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

201 Scopus citations

Abstract

Field- and temperature-dependent magnetotransport measurements on Bi layers grown by molecular-beam epitaxy have been analyzed by mixed-conduction techniques. In the thin-film limit, the net hole density scales inversely with layer thickness while the mobility scales linearly. By studying the minority electron concentration as a function of temperature in the range 100-300 K, we have unambiguously confirmed the long-standing theoretical prediction that quantum confinement should convert Bi from a semimetal to a semiconductor at a critical thickness on the order of 300.

Original languageEnglish (US)
Pages (from-to)11431-11434
Number of pages4
JournalPhysical Review B
Volume48
Issue number15
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Condensed Matter Physics

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