Abstract
One billion image sensors worldwide render optical images as digital photographs in video cameras, still cameras and camera phones. These silicon-based sensors monolithically integrate photodetection with electronic readout. However, silicon photodiodes rely on a smaller bandgap than that required for visible detection; this degrades visible-wavelength sensitivity and produces unwanted infrared sensitivity. Thin-film top-surface visible photodetectors have therefore been investigated based on amorphous, organic and colloidal quantum-dot semiconductors. However, none of these devices has exhibited visible sensitivity approaching that of silicon. Here we report a sensitive solution-processed photodetector that, across the entire visible spectrum, exhibits D (normalized detectivity) greater than 5×1012 Jones (a unit of detectivity equivalent to cmHz12W1). A photoconductive gain of >100 has been measured, facilitating high-fidelity electronic readout, and the linear dynamic range is greater than 60dB, as required for high-contrast applications. These photodetectors are also compatible with flexible organic-based electronics.
Original language | English (US) |
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Pages (from-to) | 531-534 |
Number of pages | 4 |
Journal | Nature Photonics |
Volume | 1 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2007 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics