Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectors

Pan Xia; Bin Sun; Margherita Biondi; Jian Xu; Ozan Atan; Muhammad Imran; Yasser Hassan; Yanjiang Liu; Joao M. Pina; Amin Morteza Najarian; Luke Grater; Koen Bertens; Laxmi Kishore Sagar; Husna Anwar; Min Jae Choi; Yangning Zhang; Minhal Hasham; F. Pelayo García de Arquer; Sjoerd Hoogland; Mark W.B. Wilson; Edward H. Sargent

doi:10.1002/adma.202301842

Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectors

Pan Xia, Bin Sun, Margherita Biondi, Jian Xu, Ozan Atan, Muhammad Imran, Yasser Hassan, Yanjiang Liu, Joao M. Pina, Amin Morteza Najarian, Luke Grater, Koen Bertens, Laxmi Kishore Sagar, Husna Anwar, Min Jae Choi, Yangning Zhang, Minhal Hasham, F. Pelayo García de Arquer, Sjoerd Hoogland, Mark W.B. WilsonEdward H. Sargent^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

III-V colloidal quantum dots (CQDs) are promising materials for optoelectronic applications, for they avoid heavy metals while achieving absorption spanning the visible to the infrared (IR). However, the covalent nature of III-V CQDs requires the development of new passivation strategies to fabricate conductive CQD solids for optoelectronics: this work shows herein that ligand exchanges, previously developed in II-VI and IV-VI quantum dots and employing a single ligand, do not fully passivate CQDs, and that this curtails device efficiency. Guided by density functional theory (DFT) simulations, this work develops a co-passivation strategy to fabricate indium arsenide CQD photodetectors, an approach that employs the combination of X-type methyl ammonium acetate (MaAc) and Z-type ligands InBr₃. This approach maintains charge carrier mobility and improves passivation, seen in a 25% decrease in Stokes shift, a fourfold reduction in the rate of first-exciton absorption linewidth broadening over time-under-stress, and leads to a doubling in photoluminescence (PL) lifetime. The resulting devices show 37% external quantum efficiency (EQE) at 950 nm, the highest value reported for InAs CQD photodetectors.

Original language	English (US)
Article number	2301842
Journal	Advanced Materials
Volume	35
Issue number	28
DOIs	https://doi.org/10.1002/adma.202301842
State	Published - Jul 13 2023

Funding

P.X., B.S., and M.B. contributed equally to this work. The authors thank Larissa Levina, Elenita Palmiano, Remi Wolowiec, and Damir Kopilovic for their assistance during the study period. The authors thank Ahmet Gulsaran from the University of Waterloo for helping with the characterization of the CQD materials. The authors thank Yonghua Chen for the discussion and for providing research materials. Part of the research described in this paper was performed at the Canadian Light Source, a national research facility of the University of Saskatchewan, which is supported by the Canada Foundation for Innovation (CFI), the Natural Sciences and Engineering Research Council (NSERC), the National Research Council (NRC), the Canadian Institutes of Health Research (CIHR), the Government of Saskatchewan, and the University of Saskatchewan. Part of the XPS measurements were carried out at the CFI‐funded Ontario Centre for the Characterization of Advanced Materials at the University of Toronto. Part of this work on XPS and UPS was conducted at the University of Alberta nano FAB Centre. P.X., B.S., and M.B. contributed equally to this work. The authors thank Larissa Levina, Elenita Palmiano, Remi Wolowiec, and Damir Kopilovic for their assistance during the study period. The authors thank Ahmet Gulsaran from the University of Waterloo for helping with the characterization of the CQD materials. The authors thank Yonghua Chen for the discussion and for providing research materials. Part of the research described in this paper was performed at the Canadian Light Source, a national research facility of the University of Saskatchewan, which is supported by the Canada Foundation for Innovation (CFI), the Natural Sciences and Engineering Research Council (NSERC), the National Research Council (NRC), the Canadian Institutes of Health Research (CIHR), the Government of Saskatchewan, and the University of Saskatchewan. Part of the XPS measurements were carried out at the CFI-funded Ontario Centre for the Characterization of Advanced Materials at the University of Toronto. Part of this work on XPS and UPS was conducted at the University of Alberta nano FAB Centre.

Keywords

III-V compound semiconductors
indium arsenide
near-infrared photodetectors

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.202301842

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Xia, P., Sun, B., Biondi, M., Xu, J., Atan, O., Imran, M., Hassan, Y., Liu, Y., Pina, J. M., Najarian, A. M., Grater, L., Bertens, K., Sagar, L. K., Anwar, H., Choi, M. J., Zhang, Y., Hasham, M., García de Arquer, F. P., Hoogland, S., ... Sargent, E. H. (2023). Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectors. Advanced Materials, 35(28), Article 2301842. https://doi.org/10.1002/adma.202301842

@article{a8366b66b39c406dbaf81ca154353225,

title = "Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectors",

abstract = "III-V colloidal quantum dots (CQDs) are promising materials for optoelectronic applications, for they avoid heavy metals while achieving absorption spanning the visible to the infrared (IR). However, the covalent nature of III-V CQDs requires the development of new passivation strategies to fabricate conductive CQD solids for optoelectronics: this work shows herein that ligand exchanges, previously developed in II-VI and IV-VI quantum dots and employing a single ligand, do not fully passivate CQDs, and that this curtails device efficiency. Guided by density functional theory (DFT) simulations, this work develops a co-passivation strategy to fabricate indium arsenide CQD photodetectors, an approach that employs the combination of X-type methyl ammonium acetate (MaAc) and Z-type ligands InBr3. This approach maintains charge carrier mobility and improves passivation, seen in a 25% decrease in Stokes shift, a fourfold reduction in the rate of first-exciton absorption linewidth broadening over time-under-stress, and leads to a doubling in photoluminescence (PL) lifetime. The resulting devices show 37% external quantum efficiency (EQE) at 950 nm, the highest value reported for InAs CQD photodetectors.",

keywords = "III-V compound semiconductors, indium arsenide, near-infrared photodetectors",

author = "Pan Xia and Bin Sun and Margherita Biondi and Jian Xu and Ozan Atan and Muhammad Imran and Yasser Hassan and Yanjiang Liu and Pina, {Joao M.} and Najarian, {Amin Morteza} and Luke Grater and Koen Bertens and Sagar, {Laxmi Kishore} and Husna Anwar and Choi, {Min Jae} and Yangning Zhang and Minhal Hasham and {Garc{\'i}a de Arquer}, {F. Pelayo} and Sjoerd Hoogland and Wilson, {Mark W.B.} and Sargent, {Edward H.}",

note = "Funding Information: P.X., B.S., and M.B. contributed equally to this work. The authors thank Larissa Levina, Elenita Palmiano, Remi Wolowiec, and Damir Kopilovic for their assistance during the study period. The authors thank Ahmet Gulsaran from the University of Waterloo for helping with the characterization of the CQD materials. The authors thank Yonghua Chen for the discussion and for providing research materials. Part of the research described in this paper was performed at the Canadian Light Source, a national research facility of the University of Saskatchewan, which is supported by the Canada Foundation for Innovation (CFI), the Natural Sciences and Engineering Research Council (NSERC), the National Research Council (NRC), the Canadian Institutes of Health Research (CIHR), the Government of Saskatchewan, and the University of Saskatchewan. Part of the XPS measurements were carried out at the CFI‐funded Ontario Centre for the Characterization of Advanced Materials at the University of Toronto. Part of this work on XPS and UPS was conducted at the University of Alberta nano FAB Centre. Funding Information: P.X., B.S., and M.B. contributed equally to this work. The authors thank Larissa Levina, Elenita Palmiano, Remi Wolowiec, and Damir Kopilovic for their assistance during the study period. The authors thank Ahmet Gulsaran from the University of Waterloo for helping with the characterization of the CQD materials. The authors thank Yonghua Chen for the discussion and for providing research materials. Part of the research described in this paper was performed at the Canadian Light Source, a national research facility of the University of Saskatchewan, which is supported by the Canada Foundation for Innovation (CFI), the Natural Sciences and Engineering Research Council (NSERC), the National Research Council (NRC), the Canadian Institutes of Health Research (CIHR), the Government of Saskatchewan, and the University of Saskatchewan. Part of the XPS measurements were carried out at the CFI-funded Ontario Centre for the Characterization of Advanced Materials at the University of Toronto. Part of this work on XPS and UPS was conducted at the University of Alberta nano FAB Centre. Publisher Copyright: {\textcopyright} 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.",

year = "2023",

month = jul,

day = "13",

doi = "10.1002/adma.202301842",

language = "English (US)",

volume = "35",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "28",

}

Xia, P, Sun, B, Biondi, M, Xu, J, Atan, O, Imran, M, Hassan, Y, Liu, Y, Pina, JM, Najarian, AM, Grater, L, Bertens, K, Sagar, LK, Anwar, H, Choi, MJ, Zhang, Y, Hasham, M, García de Arquer, FP, Hoogland, S, Wilson, MWB & Sargent, EH 2023, 'Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectors', Advanced Materials, vol. 35, no. 28, 2301842. https://doi.org/10.1002/adma.202301842

TY - JOUR

T1 - Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectors

AU - Xia, Pan

AU - Sun, Bin

AU - Biondi, Margherita

AU - Xu, Jian

AU - Atan, Ozan

AU - Imran, Muhammad

AU - Hassan, Yasser

AU - Liu, Yanjiang

AU - Pina, Joao M.

AU - Najarian, Amin Morteza

AU - Grater, Luke

AU - Bertens, Koen

AU - Sagar, Laxmi Kishore

AU - Anwar, Husna

AU - Choi, Min Jae

AU - Zhang, Yangning

AU - Hasham, Minhal

AU - García de Arquer, F. Pelayo

AU - Hoogland, Sjoerd

AU - Wilson, Mark W.B.

AU - Sargent, Edward H.

N1 - Funding Information: P.X., B.S., and M.B. contributed equally to this work. The authors thank Larissa Levina, Elenita Palmiano, Remi Wolowiec, and Damir Kopilovic for their assistance during the study period. The authors thank Ahmet Gulsaran from the University of Waterloo for helping with the characterization of the CQD materials. The authors thank Yonghua Chen for the discussion and for providing research materials. Part of the research described in this paper was performed at the Canadian Light Source, a national research facility of the University of Saskatchewan, which is supported by the Canada Foundation for Innovation (CFI), the Natural Sciences and Engineering Research Council (NSERC), the National Research Council (NRC), the Canadian Institutes of Health Research (CIHR), the Government of Saskatchewan, and the University of Saskatchewan. Part of the XPS measurements were carried out at the CFI‐funded Ontario Centre for the Characterization of Advanced Materials at the University of Toronto. Part of this work on XPS and UPS was conducted at the University of Alberta nano FAB Centre. Funding Information: P.X., B.S., and M.B. contributed equally to this work. The authors thank Larissa Levina, Elenita Palmiano, Remi Wolowiec, and Damir Kopilovic for their assistance during the study period. The authors thank Ahmet Gulsaran from the University of Waterloo for helping with the characterization of the CQD materials. The authors thank Yonghua Chen for the discussion and for providing research materials. Part of the research described in this paper was performed at the Canadian Light Source, a national research facility of the University of Saskatchewan, which is supported by the Canada Foundation for Innovation (CFI), the Natural Sciences and Engineering Research Council (NSERC), the National Research Council (NRC), the Canadian Institutes of Health Research (CIHR), the Government of Saskatchewan, and the University of Saskatchewan. Part of the XPS measurements were carried out at the CFI-funded Ontario Centre for the Characterization of Advanced Materials at the University of Toronto. Part of this work on XPS and UPS was conducted at the University of Alberta nano FAB Centre. Publisher Copyright: © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.

PY - 2023/7/13

Y1 - 2023/7/13

N2 - III-V colloidal quantum dots (CQDs) are promising materials for optoelectronic applications, for they avoid heavy metals while achieving absorption spanning the visible to the infrared (IR). However, the covalent nature of III-V CQDs requires the development of new passivation strategies to fabricate conductive CQD solids for optoelectronics: this work shows herein that ligand exchanges, previously developed in II-VI and IV-VI quantum dots and employing a single ligand, do not fully passivate CQDs, and that this curtails device efficiency. Guided by density functional theory (DFT) simulations, this work develops a co-passivation strategy to fabricate indium arsenide CQD photodetectors, an approach that employs the combination of X-type methyl ammonium acetate (MaAc) and Z-type ligands InBr3. This approach maintains charge carrier mobility and improves passivation, seen in a 25% decrease in Stokes shift, a fourfold reduction in the rate of first-exciton absorption linewidth broadening over time-under-stress, and leads to a doubling in photoluminescence (PL) lifetime. The resulting devices show 37% external quantum efficiency (EQE) at 950 nm, the highest value reported for InAs CQD photodetectors.

AB - III-V colloidal quantum dots (CQDs) are promising materials for optoelectronic applications, for they avoid heavy metals while achieving absorption spanning the visible to the infrared (IR). However, the covalent nature of III-V CQDs requires the development of new passivation strategies to fabricate conductive CQD solids for optoelectronics: this work shows herein that ligand exchanges, previously developed in II-VI and IV-VI quantum dots and employing a single ligand, do not fully passivate CQDs, and that this curtails device efficiency. Guided by density functional theory (DFT) simulations, this work develops a co-passivation strategy to fabricate indium arsenide CQD photodetectors, an approach that employs the combination of X-type methyl ammonium acetate (MaAc) and Z-type ligands InBr3. This approach maintains charge carrier mobility and improves passivation, seen in a 25% decrease in Stokes shift, a fourfold reduction in the rate of first-exciton absorption linewidth broadening over time-under-stress, and leads to a doubling in photoluminescence (PL) lifetime. The resulting devices show 37% external quantum efficiency (EQE) at 950 nm, the highest value reported for InAs CQD photodetectors.

KW - III-V compound semiconductors

KW - indium arsenide

KW - near-infrared photodetectors

UR - http://www.scopus.com/inward/record.url?scp=85160279870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85160279870&partnerID=8YFLogxK

U2 - 10.1002/adma.202301842

DO - 10.1002/adma.202301842

M3 - Article

C2 - 37170473

AN - SCOPUS:85160279870

SN - 0935-9648

VL - 35

JO - Advanced Materials

JF - Advanced Materials

IS - 28

M1 - 2301842

ER -

Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectors

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