Shallow p+ Layers In ln0.53Ga0.47As By Hg Implantation

H. L'Haridon, P. N. Favennec, M. Salvi, M. Razeghi

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We demonstrate for the first time a shallow p*-n homojunction fabricated on In0.53Ga0.47As by mercury ion implantation. Implanted mercury behaves as an acceptor in In0.53Ga0.47As and does not diffuse towards the bulk. Mercury implantation can be a good technique in realising a shallow junction in GalnAs.

Original languageEnglish (US)
Pages (from-to)122-124
Number of pages3
JournalElectronics Letters
Volume21
Issue number3
DOIs
StatePublished - 1985

Keywords

  • Ion implantation
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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