We demonstrate for the first time a shallow p*-n homojunction fabricated on In0.53Ga0.47As by mercury ion implantation. Implanted mercury behaves as an acceptor in In0.53Ga0.47As and does not diffuse towards the bulk. Mercury implantation can be a good technique in realising a shallow junction in GalnAs.
- Ion implantation
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering