Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Grown Undoped Ga2O3MSM Photodetectors by Pulsed Laser Deposition

D. J. Rogers; A. Courtois; F. H. Teherani; V. E. Sandana; P. Bove; X. Arrateig; L. Dam; P. Maso; M. Meftah; W. El Huni; Y. Sama; H. Bouhnane; S. Gautier; A. Ougazzaden; M. Razeghi

doi:10.1117/12.2596194

Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Grown Undoped Ga₂O₃MSM Photodetectors by Pulsed Laser Deposition

D. J. Rogers^*, A. Courtois, F. H. Teherani, V. E. Sandana, P. Bove, X. Arrateig, L. Dam, P. Maso, M. Meftah, W. El Huni, Y. Sama, H. Bouhnane, S. Gautier, A. Ougazzaden, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Ga₂O₃layers were grown on c-sapphire substrates by pulsed laser deposition. Optical transmission spectra were coherent with a bandgap engineering from 4.9 to 6.2 eV controlled via the growth conditions. X-ray diffraction revealed that the films were mainly β-Ga₂O₃(monoclinic) with strong (-201) orientation. Metal-Semiconductor-Metal photodetectors based on gold/nickel Inter- Digitated-Transducer structures were fabricated by single-step negative photolithography. 240 nm peak response sensors gave over 2 orders-of-magnitude of separation between dark and light signal with state-of-the-art solar and visible rejection ratios ((I240 : I290) of > 3 x 105 and (I240 : I400) of > 2 x 106) and dark signals of <50 pA (at a bias of -5V). Spectral responsivities showed an exceptionally narrow linewidth (16.5 nm) and peak values exhibited a slightly superlinear increase with applied bias up to a value of 6.5 A/W (i.e. a quantum efficiency of > 3000%) at 20V bias.

Original language	English (US)
Title of host publication	Oxide-Based Materials and Devices XII
Editors	David J. Rogers, David C. Look, Ferechteh H. Teherani
Publisher	SPIE
ISBN (Electronic)	9781510642096
DOIs	https://doi.org/10.1117/12.2596194
State	Published - 2021
Event	Oxide-Based Materials and Devices XII 2021 - Virtual, Online, United States Duration: Mar 6 2021 → Mar 11 2021

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11687
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Oxide-Based Materials and Devices XII 2021
Country/Territory	United States
City	Virtual, Online
Period	3/6/21 → 3/11/21

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2596194

Cite this

Rogers, D. J., Courtois, A., Teherani, F. H., Sandana, V. E., Bove, P., Arrateig, X., Dam, L., Maso, P., Meftah, M., El Huni, W., Sama, Y., Bouhnane, H., Gautier, S., Ougazzaden, A., & Razeghi, M. (2021). Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Grown Undoped Ga₂O₃MSM Photodetectors by Pulsed Laser Deposition. In D. J. Rogers, D. C. Look, & F. H. Teherani (Eds.), Oxide-Based Materials and Devices XII Article 2596194 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11687). SPIE. https://doi.org/10.1117/12.2596194

Rogers, D. J. ; Courtois, A. ; Teherani, F. H. et al. / Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Grown Undoped Ga₂O₃MSM Photodetectors by Pulsed Laser Deposition. Oxide-Based Materials and Devices XII. editor / David J. Rogers ; David C. Look ; Ferechteh H. Teherani. SPIE, 2021. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{b21485169dd746aba6198715ba28d799,

title = "Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Grown Undoped Ga2O3MSM Photodetectors by Pulsed Laser Deposition",

abstract = "Ga2O3layers were grown on c-sapphire substrates by pulsed laser deposition. Optical transmission spectra were coherent with a bandgap engineering from 4.9 to 6.2 eV controlled via the growth conditions. X-ray diffraction revealed that the films were mainly β-Ga2O3(monoclinic) with strong (-201) orientation. Metal-Semiconductor-Metal photodetectors based on gold/nickel Inter- Digitated-Transducer structures were fabricated by single-step negative photolithography. 240 nm peak response sensors gave over 2 orders-of-magnitude of separation between dark and light signal with state-of-the-art solar and visible rejection ratios ((I240 : I290) of > 3 x 105 and (I240 : I400) of > 2 x 106) and dark signals of <50 pA (at a bias of -5V). Spectral responsivities showed an exceptionally narrow linewidth (16.5 nm) and peak values exhibited a slightly superlinear increase with applied bias up to a value of 6.5 A/W (i.e. a quantum efficiency of > 3000%) at 20V bias.",

author = "Rogers, {D. J.} and A. Courtois and Teherani, {F. H.} and Sandana, {V. E.} and P. Bove and X. Arrateig and L. Dam and P. Maso and M. Meftah and {El Huni}, W. and Y. Sama and H. Bouhnane and S. Gautier and A. Ougazzaden and M. Razeghi",

year = "2021",

doi = "10.1117/12.2596194",

language = "English (US)",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Rogers, {David J.} and Look, {David C.} and Teherani, {Ferechteh H.}",

booktitle = "Oxide-Based Materials and Devices XII",

}

Rogers, DJ, Courtois, A, Teherani, FH, Sandana, VE, Bove, P, Arrateig, X, Dam, L, Maso, P, Meftah, M, El Huni, W, Sama, Y, Bouhnane, H, Gautier, S, Ougazzaden, A & Razeghi, M 2021, Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Grown Undoped Ga₂O₃MSM Photodetectors by Pulsed Laser Deposition. in DJ Rogers, DC Look & FH Teherani (eds), Oxide-Based Materials and Devices XII., 2596194, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11687, SPIE, Oxide-Based Materials and Devices XII 2021, Virtual, Online, United States, 3/6/21. https://doi.org/10.1117/12.2596194

Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Grown Undoped Ga₂O₃MSM Photodetectors by Pulsed Laser Deposition. / Rogers, D. J.; Courtois, A.; Teherani, F. H. et al.
Oxide-Based Materials and Devices XII. ed. / David J. Rogers; David C. Look; Ferechteh H. Teherani. SPIE, 2021. 2596194 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11687).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Grown Undoped Ga2O3MSM Photodetectors by Pulsed Laser Deposition

AU - Rogers, D. J.

AU - Courtois, A.

AU - Teherani, F. H.

AU - Sandana, V. E.

AU - Bove, P.

AU - Arrateig, X.

AU - Dam, L.

AU - Maso, P.

AU - Meftah, M.

AU - El Huni, W.

AU - Sama, Y.

AU - Bouhnane, H.

AU - Gautier, S.

AU - Ougazzaden, A.

AU - Razeghi, M.

PY - 2021

Y1 - 2021

N2 - Ga2O3layers were grown on c-sapphire substrates by pulsed laser deposition. Optical transmission spectra were coherent with a bandgap engineering from 4.9 to 6.2 eV controlled via the growth conditions. X-ray diffraction revealed that the films were mainly β-Ga2O3(monoclinic) with strong (-201) orientation. Metal-Semiconductor-Metal photodetectors based on gold/nickel Inter- Digitated-Transducer structures were fabricated by single-step negative photolithography. 240 nm peak response sensors gave over 2 orders-of-magnitude of separation between dark and light signal with state-of-the-art solar and visible rejection ratios ((I240 : I290) of > 3 x 105 and (I240 : I400) of > 2 x 106) and dark signals of <50 pA (at a bias of -5V). Spectral responsivities showed an exceptionally narrow linewidth (16.5 nm) and peak values exhibited a slightly superlinear increase with applied bias up to a value of 6.5 A/W (i.e. a quantum efficiency of > 3000%) at 20V bias.

AB - Ga2O3layers were grown on c-sapphire substrates by pulsed laser deposition. Optical transmission spectra were coherent with a bandgap engineering from 4.9 to 6.2 eV controlled via the growth conditions. X-ray diffraction revealed that the films were mainly β-Ga2O3(monoclinic) with strong (-201) orientation. Metal-Semiconductor-Metal photodetectors based on gold/nickel Inter- Digitated-Transducer structures were fabricated by single-step negative photolithography. 240 nm peak response sensors gave over 2 orders-of-magnitude of separation between dark and light signal with state-of-the-art solar and visible rejection ratios ((I240 : I290) of > 3 x 105 and (I240 : I400) of > 2 x 106) and dark signals of <50 pA (at a bias of -5V). Spectral responsivities showed an exceptionally narrow linewidth (16.5 nm) and peak values exhibited a slightly superlinear increase with applied bias up to a value of 6.5 A/W (i.e. a quantum efficiency of > 3000%) at 20V bias.

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M3 - Conference contribution

AN - SCOPUS:85107179853

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices XII

A2 - Rogers, David J.

A2 - Look, David C.

A2 - Teherani, Ferechteh H.

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Y2 - 6 March 2021 through 11 March 2021

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Rogers DJ, Courtois A, Teherani FH, Sandana VE, Bove P, Arrateig X et al. Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Grown Undoped Ga₂O₃MSM Photodetectors by Pulsed Laser Deposition. In Rogers DJ, Look DC, Teherani FH, editors, Oxide-Based Materials and Devices XII. SPIE. 2021. 2596194. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2596194