Short-wave infrared nano-injection imaging sensors

Omer Gokalp Memis, John Kohoutek, Wei Wu, Ryan M. Gelfand, Hooman Mohseni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A novel nano-injection based imaging sensor is presented towards demanding applications in telecommunications, biophotonics, optical tomography, explosives detection and non-destructive material evaluation. The sensor can provide low noise levels concurrently with strong internal amplification, which results in a significant increase in the signal-to-noise levels compared to existing short-wave infrared imagers. The imager arrays are 320-by-256 pixels, with a pixel pitch of 30 μm. Post-hybridization, the imager test pixels shows internal amplification exceeding 2,000 electrons/photon with little excess noise (F∼1.5) even at high amplification values. The imager shows a high signal to noise ratio at high frame rates and short integration times. Furthermore, the nano-injection imaging sensor shows significant sensitivity improvement over a high-end commercial short-wave infrared camera at similar settings, which highlights the benefits of implementing nano-injection process in imaging sensors.

Original languageEnglish (US)
Title of host publicationIEEE Sensors 2010 Conference, SENSORS 2010
Pages128-131
Number of pages4
DOIs
StatePublished - Dec 1 2010
Event9th IEEE Sensors Conference 2010, SENSORS 2010 - Waikoloa, HI, United States
Duration: Nov 1 2010Nov 4 2010

Other

Other9th IEEE Sensors Conference 2010, SENSORS 2010
CountryUnited States
CityWaikoloa, HI
Period11/1/1011/4/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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