Short-wavelength solar-blind detectors - Status, prospects, and markets

Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticle

209 Scopus citations

Abstract

Recent advances in the research work on III-nitride semiconductors and AlxGa1-xN materials in particular has renewed the interest and led to significant progress in the development of ultraviolet (UV) photodetectors able to detect light in the mid- and near-UV spectral region (λ ∼200-400 nm). There have been a growing number of applications which require the use of such sensors and, in many of these, it is important to be able to sense UV light without detecting infrared or visible light, especially from the Sun, in order to minimize the chances of false detection or high background. The research work on short-wavelength UV detectors has, therefore, been recently focused on realizing short-wavelength "solar-blind" detectors which, by definition, are insensitive to photons with wavelengths longer than ∼285 nm. In this paper, the development of AlxGa1-xN-based solar-blind UV detectors will be reviewed. The technological issues pertaining to material synthesis and device fabrication will be discussed. The current state-of-the-art and future prospects for these detectors will be reviewed and discussed.

Original languageEnglish (US)
Pages (from-to)1006-1014
Number of pages9
JournalProceedings of the IEEE
Volume90
Issue number6
DOIs
StatePublished - Jan 1 2002

Keywords

  • AlGaN
  • Avalanche
  • Focal plane array
  • Metal-semiconductor-metal (MSM)
  • Photodiode
  • Short-wavelength photoconductor
  • Solar-blind ultraviolet photodetector
  • p-i-n

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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