Signal-to-noise performance of a short-wave infrared nanoinjection imager

Orner Gokalp Memis; John Kohoutek; Wei Wu; Ryan M. Gelfand; Hooman Mohseni

doi:10.1364/OL.35.002699

Signal-to-noise performance of a short-wave infrared nanoinjection imager

Orner Gokalp Memis, John Kohoutek, Wei Wu, Ryan M. Gelfand, Hooman Mohseni^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report on the signal-to-noise performance of a nanoinjection imager, which is based on a short-wave IR InGaAs/ GaAsSb/InP detector with an internal avalanche-free amplification mechanism. Test pixels in the imager show responsivity values reaching 250 A/W at 1550 nm, -75°C, and 1.5 V due to an internal charge amplification mechanism in the detector. In the imager, the measured imager noise was 28 electrons (e^-) rms at a frame rate of 1950 frames/s. Additionally, compared to a high-end short-wave IR imager, the nanoinjection camera shows 2 orders of magnitude improved signal-to-noise ratio at thermoelectric cooling temperatures primarily due to the small excess noise at high amplification.

Original language	English (US)
Pages (from-to)	2699-2701
Number of pages	3
Journal	Optics Letters
Volume	35
Issue number	16
DOIs	https://doi.org/10.1364/OL.35.002699
State	Published - Aug 15 2010

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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AU - Wu, Wei

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AU - Mohseni, Hooman

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Signal-to-noise performance of a short-wave infrared nanoinjection imager

Abstract

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