Abstract
We report on the signal-to-noise performance of a nanoinjection imager, which is based on a short-wave IR InGaAs/ GaAsSb/InP detector with an internal avalanche-free amplification mechanism. Test pixels in the imager show responsivity values reaching 250 A/W at 1550 nm, -75°C, and 1.5 V due to an internal charge amplification mechanism in the detector. In the imager, the measured imager noise was 28 electrons (e-) rms at a frame rate of 1950 frames/s. Additionally, compared to a high-end short-wave IR imager, the nanoinjection camera shows 2 orders of magnitude improved signal-to-noise ratio at thermoelectric cooling temperatures primarily due to the small excess noise at high amplification.
Original language | English (US) |
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Pages (from-to) | 2699-2701 |
Number of pages | 3 |
Journal | Optics Letters |
Volume | 35 |
Issue number | 16 |
DOIs | |
State | Published - Aug 15 2010 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics