Signal-to-noise performance of a short-wave infrared nanoinjection imager

Orner Gokalp Memis, John Kohoutek, Wei Wu, Ryan M. Gelfand, Hooman Mohseni*

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

We report on the signal-to-noise performance of a nanoinjection imager, which is based on a short-wave IR InGaAs/ GaAsSb/InP detector with an internal avalanche-free amplification mechanism. Test pixels in the imager show responsivity values reaching 250 A/W at 1550 nm, -75°C, and 1.5 V due to an internal charge amplification mechanism in the detector. In the imager, the measured imager noise was 28 electrons (e-) rms at a frame rate of 1950 frames/s. Additionally, compared to a high-end short-wave IR imager, the nanoinjection camera shows 2 orders of magnitude improved signal-to-noise ratio at thermoelectric cooling temperatures primarily due to the small excess noise at high amplification.

Original languageEnglish (US)
Pages (from-to)2699-2701
Number of pages3
JournalOptics Letters
Volume35
Issue number16
DOIs
StatePublished - Aug 15 2010

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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