Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

Chao Wang, Wen Ya Lee, Desheng Kong, Raphael Pfattner, Guillaume Schweicher, Reina Nakajima, Chien Lu, Jianguo Mei, Tae Hoon Lee, Hung Chin Wu, Jeffery Lopez, Ying Diao, Xiaodan Gu, Scott Himmelberger, Weijun Niu, James R. Matthews, Mingqian He, Alberto Salleo, Yoshio Nishi, Zhenan Bao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Scopus citations

Abstract

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10-10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

Original languageEnglish (US)
Article number17849
JournalScientific reports
Volume5
DOIs
StatePublished - Dec 14 2015

Funding

G. S. acknowledges postdoctoral fellowship support from the David and Alice van Buuren Funds of the Belgian American Educational Foundation (B.A.E.F.) and from the Fulbright Foundation (Fulbright Research Scholar Fellow). Z. B. acknowledges partial support from the Air Force Office of Scientific Research (FA9550-15-1-0106) and Samsung Electronics. R. P. acknowledges support from the Marie Curie Fellowship, TECNIOSPRING. T.H.L. acknowledges support from ILJU foundation in South Korea and Toshiba Corporation through CIS-FMA.

ASJC Scopus subject areas

  • General

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