Abstract
We report an in situ examination of individual Si p-n junction nanowires (NWs) using off-axis electron holography (EH) during transmission electron microscopy. The SiNWs were synthesized by chemical vapor deposition with an axial dopant profile from n- to p-type, and then placed inside the transmission electron microscope as a cantilever geometry in contact with a movable Pt probe for in situ biasing measurements during simultaneous EH observations. The phase shift from EH indicates the potential shift between the p- and n-segments to be 1.03 ± 0.17 V due to the built-in voltage. The I-V characteristics of a single SiNW indicate the formation of a Schottky barrier between the NW tip and the movable Pt contact. EH observations show a strong concentration of electric field at this contact, preventing a change in the Si energy bands in the p-n junction region due to the applied bias.
Original language | English (US) |
---|---|
Article number | 115703 |
Journal | Nanotechnology |
Volume | 24 |
Issue number | 11 |
DOIs | |
State | Published - Mar 22 2013 |
ASJC Scopus subject areas
- General Chemistry
- Mechanics of Materials
- Mechanical Engineering
- Bioengineering
- Electrical and Electronic Engineering
- General Materials Science