Silicon-nitride photonic circuits interfaced with monolayer MoS2

Guohua Wei, Teodor K. Stanev, David A. Czaplewski, Il Woong Jung, Nathaniel P. Stern

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

Original languageEnglish (US)
Article number091112
JournalApplied Physics Letters
Issue number9
StatePublished - Aug 31 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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