Silicon-nitride photonic circuits interfaced with monolayer MoS2

Guohua Wei; Teodor K. Stanev; David A. Czaplewski; Il Woong Jung; Nathaniel P. Stern

doi:10.1063/1.4929779

Silicon-nitride photonic circuits interfaced with monolayer MoS₂

Guohua Wei, Teodor K. Stanev, David A. Czaplewski, Il Woong Jung, Nathaniel P. Stern

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

Original language	English (US)
Article number	091112
Journal	Applied Physics Letters
Volume	107
Issue number	9
DOIs	https://doi.org/10.1063/1.4929779
State	Published - Aug 31 2015

Funding

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4929779

Cite this

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title = "Silicon-nitride photonic circuits interfaced with monolayer MoS2",

abstract = "We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.",

author = "Guohua Wei and Stanev, {Teodor K.} and Czaplewski, {David A.} and Jung, {Il Woong} and Stern, {Nathaniel P.}",

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AU - Stanev, Teodor K.

AU - Czaplewski, David A.

AU - Jung, Il Woong

AU - Stern, Nathaniel P.

PY - 2015/8/31

Y1 - 2015/8/31

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AB - We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

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