Silicon/AlGaInAs heterogeneouly integrated laser with high-reflectivity right-angled-wedge retro-reflector

Yongming Tu*, Yunan Zheng, Yingyan Huang, Yadong Wang, Yongqiang Wei, Doris Ng, Cheewei Lee, Boyang Liu, Seng-Tiong Ho

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We report the design and experimental results of an electrically pumped Silicon/AlGaInAs evanescent laser with right-angled-wedge reflector defined in the silicon layer. A continuous-wave laser with a lasing threshold current density of 2.8kA/cm2 is achieved.

Original languageEnglish (US)
JournalOptics InfoBase Conference Papers
StatePublished - Dec 1 2010
EventFrontiers in Optics, FiO 2010 - Rochester, NY, United States
Duration: Oct 24 2010Oct 28 2010

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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