We report the design and experimental results of an electrically pumped Silicon/AlGaInAs evanescent laser with right-angled-wedge reflector defined in the silicon layer. A continuous-wave laser with a lasing threshold current density of 2.8kA/cm2 is achieved.
|Original language||English (US)|
|Journal||Optics InfoBase Conference Papers|
|State||Published - Dec 1 2010|
|Event||Frontiers in Optics, FiO 2010 - Rochester, NY, United States|
Duration: Oct 24 2010 → Oct 28 2010
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics