Abstract
We report the design and experimental results of an electrically pumped Silicon/AlGaInAs evanescent laser with right-angled-wedge reflector defined in the silicon layer. A continuous-wave laser with a lasing threshold current density of 2.8kA/cm2 is achieved.
Original language | English (US) |
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Journal | Optics InfoBase Conference Papers |
State | Published - Dec 1 2010 |
Event | Frontiers in Optics, FiO 2010 - Rochester, NY, United States Duration: Oct 24 2010 → Oct 28 2010 |
ASJC Scopus subject areas
- Instrumentation
- Atomic and Molecular Physics, and Optics