TY - PAT
T1 - SILOXANE-POLYMER DIELECTRIC COMPOSITIONS AND RELATED ORGANIC FIELD-EFFECT TRANSISTORS
AU - Marks, Tobin
N1 - filingdate: 2005-12-22
issueddate: 2009-10-20
Status: published
attorneydocketnumber: 2004-112-04
PY - 2009/10/20
Y1 - 2009/10/20
N2 - Crosslinkable Polymer Dielectrics
NU 2004-112
Inventors
He Yan
Myung-Han Yoon
Antonio Facchetti
Tobin J. Marks*
Short Description
Novel dielectric polymers that can easily be incorporated into organic thin film transistors to enable high capacitance and low operating voltage
#materials #semiconductors #thin film #transistor #manufacturing
Abstract
Electronic devices based on organic thin-film transistors (OTFTs) provide several advantages over traditional inorganic-based transistors. OTFT devices are lightweight, flexible and can be easily fabricated into large-area displays. However, the continued development of OTFTs hinges on high-performance gate dielectric materials. Such a material should be insulating, flexible, easily deposited from solution and be compatible with various organic and inorganic semiconductors. The Marks group from Northwestern University has developed a polymer dielectric material that accomplishes these goals. Their innovative gate dielectric material is composed of readily available polymers combined with organosilane crosslinking agents. The addition of a crosslinking agent makes this type of dielectric material impervious to cracking and delamination when the substrate is bent or treated with a solvent. Furthermore, these favorable mechanical properties also allow for the OTFT to be processed after the dielectric is deposited via solution-phase fabrication techniques.
Applications
o Organic field-effect and thin film transistors
Advantages
o High capacitance and low leakage
o Easy to deposit from solution
o Strong adherence to a variety of substrates
o Low operating voltage
Publications
Yoon M-H, Yan H, Facchetti A, Marks TJ. Low-Voltage Organic Field-Effect Transistors and Inverters Enabled by Ultrathin Cross-Linked Polymers as Gate Dielectrics (2005). J. Am. Chem. Soc. 127: 10388-10395.
IP Status
Issued US patents 8,093,588 and 7,605,394. International patent application has been filed.
Marketing Contact
Allan Nader, PhD
Invention Manager
(e) a-nader@northwestern.edu
(p) 847.491.4456
AB - Crosslinkable Polymer Dielectrics
NU 2004-112
Inventors
He Yan
Myung-Han Yoon
Antonio Facchetti
Tobin J. Marks*
Short Description
Novel dielectric polymers that can easily be incorporated into organic thin film transistors to enable high capacitance and low operating voltage
#materials #semiconductors #thin film #transistor #manufacturing
Abstract
Electronic devices based on organic thin-film transistors (OTFTs) provide several advantages over traditional inorganic-based transistors. OTFT devices are lightweight, flexible and can be easily fabricated into large-area displays. However, the continued development of OTFTs hinges on high-performance gate dielectric materials. Such a material should be insulating, flexible, easily deposited from solution and be compatible with various organic and inorganic semiconductors. The Marks group from Northwestern University has developed a polymer dielectric material that accomplishes these goals. Their innovative gate dielectric material is composed of readily available polymers combined with organosilane crosslinking agents. The addition of a crosslinking agent makes this type of dielectric material impervious to cracking and delamination when the substrate is bent or treated with a solvent. Furthermore, these favorable mechanical properties also allow for the OTFT to be processed after the dielectric is deposited via solution-phase fabrication techniques.
Applications
o Organic field-effect and thin film transistors
Advantages
o High capacitance and low leakage
o Easy to deposit from solution
o Strong adherence to a variety of substrates
o Low operating voltage
Publications
Yoon M-H, Yan H, Facchetti A, Marks TJ. Low-Voltage Organic Field-Effect Transistors and Inverters Enabled by Ultrathin Cross-Linked Polymers as Gate Dielectrics (2005). J. Am. Chem. Soc. 127: 10388-10395.
IP Status
Issued US patents 8,093,588 and 7,605,394. International patent application has been filed.
Marketing Contact
Allan Nader, PhD
Invention Manager
(e) a-nader@northwestern.edu
(p) 847.491.4456
M3 - Patent
M1 - 7605394
ER -