Simulation of current-injection and all-optical nanophotonic semiconductor devices with multi-level multi-electron FDTD model

Yingyan Huang*, Seng-Tiong Ho

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Simulating the spatial-temporal behaviors of novel nanophotonic semiconductor devices is challenging, as it has to deal with complex electromagnetic structures and semiconductor carrier dynamics. We report successful simulation of current-injection Photonic-Crystal Laser and all-optical Photonic Transistor using our multi-level multi-electron FDTD model.

Original languageEnglish (US)
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages256-257
Number of pages2
Volume1
DOIs
StatePublished - Dec 1 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: Oct 22 2006Oct 25 2006

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/TerritoryKorea, Republic of
CityGyeongju
Period10/22/0610/25/06

Keywords

  • All-optical switch
  • FDTD
  • Phtonic crystal laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Fingerprint

Dive into the research topics of 'Simulation of current-injection and all-optical nanophotonic semiconductor devices with multi-level multi-electron FDTD model'. Together they form a unique fingerprint.

Cite this