Simulation of Semiconductor media in photonic devices using the dynamic thermal electron quantum medium FDTD model

K. Ravi*, Y. Lai, Y. Huang, Seng-Tiong Ho

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The capabilities of the Dynamic Thermal Electron Quantum Medium FDTD (DTEQM-FDTD) model in simulating semiconductor media and devices are illustrated. Both transient and steady-state carrier dynamics, along with associated physical phenomena are obtained. Using the same computational model, the operational dynamics of a Fabry-Perot laser cavity are further illustrated.

Original languageEnglish (US)
Title of host publication2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 - Singapore, Singapore
Duration: Dec 8 2008Dec 11 2008

Publication series

Name2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Other

Other2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
CountrySingapore
CitySingapore
Period12/8/0812/11/08

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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    Ravi, K., Lai, Y., Huang, Y., & Ho, S-T. (2008). Simulation of Semiconductor media in photonic devices using the dynamic thermal electron quantum medium FDTD model. In 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 [4781329] (2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008). https://doi.org/10.1109/IPGC.2008.4781329