Simultaneous growth of two different oriented GaN epilayers on (1 1 · 0) sapphire I. Morphology and orientation

Tomohisa Kato, Hitoshi Ohsato*, Takashi Okuda, Patric Kung, Adam Saxler, Chien Jen Sun, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Two different oriented (0 0 · 1) and (1 0 · 0)GaN thin films have been grown simultaneously on (1 1 · 0)Al2O3 substrates by low-pressure MOCVD. The crystallinity of the epilayer is not as good as a (0 0 · 1) epilayer grown with a single orientation. Moreover, three different morphologies of the GaN epilayers have appeared: hexagonal pyramids for (0 0 · 1)GaN and rectangular columns or bow tie shapes for (1 0 · 0)GaN epilayer. The epitaxial relationship for in-plane direction between epilayer and the substrates has been determined by precession photographs: [1 0 0]GaN ∧ [0 0 1]Al2O3 = 30′ for (0 0 · 1)GaN ∥ (1 1 · 0)Al2O3, and [0 0 1]GaN ∧ [0 0 1]Al2O3 = 30°43′ for (1 0 · 0)GaN ∥ (1 1 · 0)Al2O3. The simultaneous growth with different morphologies is very interesting to crystallographers. Usually, this phenomena is very rare because the growth potential energies of different morphologies are usually different from each other.

Original languageEnglish (US)
Pages (from-to)244-248
Number of pages5
JournalJournal of Crystal Growth
Volume173
Issue number3-4
DOIs
StatePublished - Jan 1 1997

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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