Simultaneous growth of two different oriented GaN epilayers on (1 1 · 0) sapphire I. Morphology and orientation

Tomohisa Kato; Hitoshi Ohsato; Takashi Okuda; Patric Kung; Adam Saxler; Chien Jen Sun; Manijeh Razeghi

doi:10.1016/S0022-0248(96)00908-6

Simultaneous growth of two different oriented GaN epilayers on (1 1 · 0) sapphire I. Morphology and orientation

Tomohisa Kato, Hitoshi Ohsato^*, Takashi Okuda, Patric Kung, Adam Saxler, Chien Jen Sun, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Two different oriented (0 0 · 1) and (1 0 · 0)GaN thin films have been grown simultaneously on (1 1 · 0)Al₂O₃ substrates by low-pressure MOCVD. The crystallinity of the epilayer is not as good as a (0 0 · 1) epilayer grown with a single orientation. Moreover, three different morphologies of the GaN epilayers have appeared: hexagonal pyramids for (0 0 · 1)GaN and rectangular columns or bow tie shapes for (1 0 · 0)GaN epilayer. The epitaxial relationship for in-plane direction between epilayer and the substrates has been determined by precession photographs: [1 0 0]_GaN ∧ [0 0 1]_Al2O3 = 30′ for (0 0 · 1)GaN ∥ (1 1 · 0)Al₂O₃, and [0 0 1]_GaN ∧ [0 0 1]_Al2O3 = 30°43′ for (1 0 · 0)GaN ∥ (1 1 · 0)Al₂O₃. The simultaneous growth with different morphologies is very interesting to crystallographers. Usually, this phenomena is very rare because the growth potential energies of different morphologies are usually different from each other.

Original language	English (US)
Pages (from-to)	244-248
Number of pages	5
Journal	Journal of Crystal Growth
Volume	173
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(96)00908-6
State	Published - Apr 1997

Funding

The authors would like to thank Dean Jerome Cohen for the use of the precession camera, and Murata Science Foundation and Taiyo Yuden for supporting the leave of H. Ohsato and T. Kato.

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(96)00908-6

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title = "Simultaneous growth of two different oriented GaN epilayers on (1 1 · 0) sapphire I. Morphology and orientation",

abstract = "Two different oriented (0 0 · 1) and (1 0 · 0)GaN thin films have been grown simultaneously on (1 1 · 0)Al2O3 substrates by low-pressure MOCVD. The crystallinity of the epilayer is not as good as a (0 0 · 1) epilayer grown with a single orientation. Moreover, three different morphologies of the GaN epilayers have appeared: hexagonal pyramids for (0 0 · 1)GaN and rectangular columns or bow tie shapes for (1 0 · 0)GaN epilayer. The epitaxial relationship for in-plane direction between epilayer and the substrates has been determined by precession photographs: [1 0 0]GaN ∧ [0 0 1]Al2O3 = 30′ for (0 0 · 1)GaN ∥ (1 1 · 0)Al2O3, and [0 0 1]GaN ∧ [0 0 1]Al2O3 = 30°43′ for (1 0 · 0)GaN ∥ (1 1 · 0)Al2O3. The simultaneous growth with different morphologies is very interesting to crystallographers. Usually, this phenomena is very rare because the growth potential energies of different morphologies are usually different from each other.",

author = "Tomohisa Kato and Hitoshi Ohsato and Takashi Okuda and Patric Kung and Adam Saxler and Sun, {Chien Jen} and Manijeh Razeghi",

note = "Funding Information: The authors would like to thank Dean Jerome Cohen for the use of the precession camera, and Murata Science Foundation and Taiyo Yuden for supporting the leave of H. Ohsato and T. Kato.",

year = "1997",

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doi = "10.1016/S0022-0248(96)00908-6",

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T1 - Simultaneous growth of two different oriented GaN epilayers on (1 1 · 0) sapphire I. Morphology and orientation

AU - Kato, Tomohisa

AU - Ohsato, Hitoshi

AU - Okuda, Takashi

AU - Kung, Patric

AU - Saxler, Adam

AU - Sun, Chien Jen

AU - Razeghi, Manijeh

N1 - Funding Information: The authors would like to thank Dean Jerome Cohen for the use of the precession camera, and Murata Science Foundation and Taiyo Yuden for supporting the leave of H. Ohsato and T. Kato.

PY - 1997/4

Y1 - 1997/4

N2 - Two different oriented (0 0 · 1) and (1 0 · 0)GaN thin films have been grown simultaneously on (1 1 · 0)Al2O3 substrates by low-pressure MOCVD. The crystallinity of the epilayer is not as good as a (0 0 · 1) epilayer grown with a single orientation. Moreover, three different morphologies of the GaN epilayers have appeared: hexagonal pyramids for (0 0 · 1)GaN and rectangular columns or bow tie shapes for (1 0 · 0)GaN epilayer. The epitaxial relationship for in-plane direction between epilayer and the substrates has been determined by precession photographs: [1 0 0]GaN ∧ [0 0 1]Al2O3 = 30′ for (0 0 · 1)GaN ∥ (1 1 · 0)Al2O3, and [0 0 1]GaN ∧ [0 0 1]Al2O3 = 30°43′ for (1 0 · 0)GaN ∥ (1 1 · 0)Al2O3. The simultaneous growth with different morphologies is very interesting to crystallographers. Usually, this phenomena is very rare because the growth potential energies of different morphologies are usually different from each other.

AB - Two different oriented (0 0 · 1) and (1 0 · 0)GaN thin films have been grown simultaneously on (1 1 · 0)Al2O3 substrates by low-pressure MOCVD. The crystallinity of the epilayer is not as good as a (0 0 · 1) epilayer grown with a single orientation. Moreover, three different morphologies of the GaN epilayers have appeared: hexagonal pyramids for (0 0 · 1)GaN and rectangular columns or bow tie shapes for (1 0 · 0)GaN epilayer. The epitaxial relationship for in-plane direction between epilayer and the substrates has been determined by precession photographs: [1 0 0]GaN ∧ [0 0 1]Al2O3 = 30′ for (0 0 · 1)GaN ∥ (1 1 · 0)Al2O3, and [0 0 1]GaN ∧ [0 0 1]Al2O3 = 30°43′ for (1 0 · 0)GaN ∥ (1 1 · 0)Al2O3. The simultaneous growth with different morphologies is very interesting to crystallographers. Usually, this phenomena is very rare because the growth potential energies of different morphologies are usually different from each other.

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Simultaneous growth of two different oriented GaN epilayers on (1 1 · 0) sapphire I. Morphology and orientation

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