Simultaneous growth of two differently oriented GaN epilayers on (1 1 · 0) sapphire II. A growth model of (0 0 · 1) and (1 0 · 0) GaN

Tomohisa Kato*, Patric Kung, Adam Saxler, Chien Jen Sun, Hitoshi Ohsato, Manijeh Razeghi, Takashi Okuda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Two differently oriented GaN (0 0 · 1) and (1 0 · 0) epicrystals have been grown simultaneously on (1 1 · 0) sapphire substrates in a low-pressure MOCVD system with a fixed susceptor. In This paper, we have developed two simple crystallographic growth models based on crystallographic chemistry. The models interpret the formation of simultaneous growth which come from the anisotropic surface structure of (1 1 · 0) sapphire with a pair of Al ion arrays. From the growth models, we have found that the growth mechanism is affected by thermal vibration of atoms composed of GaN epicrystals, therefore, simultaneous growth of the GaN might be created. The crystallographic models do not contradict each other. Moreover, this simultaneous growth is of great interest for crystallography.

Original languageEnglish (US)
Pages (from-to)131-139
Number of pages9
JournalJournal of Crystal Growth
Volume183
Issue number1-2
DOIs
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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