Simultaneous growth of two differently oriented GaN epilayers on (1 1 · 0) sapphire II. A growth model of (0 0 · 1) and (1 0 · 0) GaN

Two differently oriented GaN (0 0 · 1) and (1 0 · 0) epicrystals have been grown simultaneously on (1 1 · 0) sapphire substrates in a low-pressure MOCVD system with a fixed susceptor. In This paper, we have developed two simple crystallographic growth models based on crystallographic chemistry. The models interpret the formation of simultaneous growth which come from the anisotropic surface structure of (1 1 · 0) sapphire with a pair of Al ion arrays. From the growth models, we have found that the growth mechanism is affected by thermal vibration of atoms composed of GaN epicrystals, therefore, simultaneous growth of the GaN might be created. The crystallographic models do not contradict each other. Moreover, this simultaneous growth is of great interest for crystallography.