Single crystal wurtzitic aluminum nitride growth on silicon using supersonic gas jets

S. A. Ustin*, L. Lauhon, K. A. Brown, D. Q. Hu, W. Ho

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


Highly oriented aluminum nitride (0001) films have been grown on Si(001) and Si(111) substrates at temperatures between 550°C and 775°C with dual supersonic molecular beam sources. Triethylaluminum (TEA;[(C 2 H 5 ) 3 Al]) and ammonia (NH 3 ) were used as precursors. Hydrogen, helium, and nitrogen were used as seeding gases for the precursors, providing a wide range of possible kinetic energies for the supersonic beams due to the disparate masses of the seed gases. Growth rates of AlN were found to depend strongly on the substrate orientation and the kinetic energy of the incident precursor; a significant increase in growth rate is seen when seeding in hydrogen or helium as opposed to nitrogen. Growth rates were 2-3 times greater on Si(001) than on Si(111). Structural characterization of the films was done by reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD). X-ray rocking curve (XRC) full-width half-maxima (FWHM) were seen as small as 2.5°. Rutherford back scattering (RBS) was used to determine the thickness of the films and their chemical composition. Films were shown to be nitrogen rich, deviating from perfect stoichiometry by 10%-20%. Surface analysis was performed by Auger electron spectroscopy (AES).

Original languageEnglish (US)
Pages (from-to)319-324
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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