Single-electron charging effects in insulating wires

Venkat Chandrasekhar*, Zvi Ovadyahu, Richard A. Webb

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

We present measurements of the transport properties of 0.75-long, narrow, insulating indium oxide wires and rings. These devices have no apparent tunnel barriers, yet they exhibit effects similar to those found in series arrays of very small-capacitance tunnel junctions: highly nonlinear I-V characteristics and a zero-bias conductance which is periodic in a voltage applied by means of a lateral gate. These effects are due to the influence of single-electron charging on transport through localized states in the insulating regime.

Original languageEnglish (US)
Pages (from-to)2862-2865
Number of pages4
JournalPhysical review letters
Volume67
Issue number20
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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