Single electron–hole pair sensitive silicon detector with surface event discrimination

Ziqing Hong, Runze Ren, Noah Kurinsky*, Enectali Figueroa-Feliciano, Lise Wills, Suhas Ganjam, Rupak Mahapatra, Nader Mirabolfathi, Brian Nebolsky, H. Douglas Pinckney, Mark Platt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We demonstrate single electron–hole pair resolution in a single-sided, contact-free 1 cm2 by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of ±50 V, resulting in a measured charge resolution of 0.06 electron–hole pairs. The high aluminum coverage (∼70%) of this device allows for the discrimination of surface events and separation of events occurring near the center of the detector from those near the edge. We use this discrimination ability to show that non-quantized dark events seen in previous detectors of a similar design are likely dominated by charge leakage along the sidewall of the device.

Funding

ZH and RR are supported by National Science Foundation, USA Grant PHY-1809730. This document was prepared by NK using the resources of the Fermi National Accelerator Laboratory (Fermilab), a U.S. Department of Energy, Office of Science, HEP User Facility. Fermilab is managed by Fermi Research Alliance, LLC (FRA), acting under Contract No. DE-AC02-07CH11359. We thank Matt Pyle for the mask design for this device and discussions thereof, Blas Cabrera and Martin Huber for support in the electronics readout, Noemie Bastidon for her work in the preliminary design of our optical fiber setup and wirebonding, and SLAC for making available their computing resources.

Keywords

  • Dark matter
  • Low-threshold
  • Quantization
  • Silicon calorimeter

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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