The fabrication and characterization of single molecule units on silicion(100) surface was analyzed using ultra-high vacuum scanning tunneling microscope (UHV-STM). The impact of feedback controlled lithography (FCL) hydrogen desorption on VLSI technology was also studied. The analysis of mechanical, chemical and electronic properties of desorbed species suggested that efficient STM potentiometric location of p-n junctions made them useful as alignment markers.
|Original language||English (US)|
|Number of pages||1|
|Journal||Proceedings of the IEEE Great Lakes Symposium on VLSI|
|State||Published - Jan 1 2001|
ASJC Scopus subject areas
- Electrical and Electronic Engineering