Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass

S. Dasgupta; S. Birner; C. Knaak; M. Bichler; A. Fontcuberta I Morral; G. Abstreiter; M. Grayson

doi:10.1063/1.2991448

Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass

S. Dasgupta, S. Birner, C. Knaak, M. Bichler, A. Fontcuberta I Morral, G. Abstreiter, M. Grayson^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 Å wide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths W greater than 53 Å. Below this, double-valley occupation is predicted such that the longitudinal mass axes are collinear. We observed mobility anisotropy in the electronic transport along the crystallographic directions in the ratio of 2.8, attributed to the mass anisotropy as well as anisotropic scattering of the electrons in the X -valley of AlAs.

Original language	English (US)
Article number	132102
Journal	Applied Physics Letters
Volume	93
Issue number	13
DOIs	https://doi.org/10.1063/1.2991448
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass",

abstract = "We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 {\AA} wide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths W greater than 53 {\AA}. Below this, double-valley occupation is predicted such that the longitudinal mass axes are collinear. We observed mobility anisotropy in the electronic transport along the crystallographic directions in the ratio of 2.8, attributed to the mass anisotropy as well as anisotropic scattering of the electrons in the X -valley of AlAs.",

author = "S. Dasgupta and S. Birner and C. Knaak and M. Bichler and {Fontcuberta I Morral}, A. and G. Abstreiter and M. Grayson",

note = "Funding Information: This work was funded by BMBF nanoQUIT Project No. 01BM470 and the Nanosystems Initiative Munich (NIM).",

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doi = "10.1063/1.2991448",

language = "English (US)",

volume = "93",

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T1 - Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass

AU - Dasgupta, S.

AU - Birner, S.

AU - Knaak, C.

AU - Bichler, M.

AU - Fontcuberta I Morral, A.

AU - Abstreiter, G.

AU - Grayson, M.

N1 - Funding Information: This work was funded by BMBF nanoQUIT Project No. 01BM470 and the Nanosystems Initiative Munich (NIM).

PY - 2008

Y1 - 2008

N2 - We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 Å wide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths W greater than 53 Å. Below this, double-valley occupation is predicted such that the longitudinal mass axes are collinear. We observed mobility anisotropy in the electronic transport along the crystallographic directions in the ratio of 2.8, attributed to the mass anisotropy as well as anisotropic scattering of the electrons in the X -valley of AlAs.

AB - We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 Å wide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths W greater than 53 Å. Below this, double-valley occupation is predicted such that the longitudinal mass axes are collinear. We observed mobility anisotropy in the electronic transport along the crystallographic directions in the ratio of 2.8, attributed to the mass anisotropy as well as anisotropic scattering of the electrons in the X -valley of AlAs.

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Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass

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