Slow electromagnetic waves in asymmetric SISIS′ junctions

I. P. Nevirkovets*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Splitting of the Swihart velocity in the asymmetric SISIS′ devices (where S is a superconductor and I is an insulator) has been investigated. Analysis based on the existing models of the dynamic state of the stacked junctions shows that if one of the external electrodes, S′, has a considerably lower critical temperature T′c than the other two electrodes, and the temperature of the system approaches T′c, but T < T′c, then the velocities C+ and c- approach their limit values: c+ → c0, and c- → 0 (here c0 is the Swihart velocity in the single SIS junction). Experimentally, both asymmetric Nb/Al-AlOx-Nb/Al-AlOx-Ta/Nb and symmetric Nb/Al-AlOx-Nb/Al-AlOx-Nb two-terminal devices have been investigated. The values c- = (1.47 ± 0.04) × 106 m/s and c- = (1.7 ± 0.1) × 106 m/s have been obtained for the devices of the first and second type, respectively. Although, as expected, the value of c- is lower in the first case, the difference between the c- values for the two types of devices is rather small. This is in agreement with the theory, because in the first case the influence of the thickness of the middle electrode on the value of c- predominates the same effect arising from the reduced superconductivity of the Ta/Nb electrode.

Original languageEnglish (US)
Pages (from-to)167-172
Number of pages6
JournalPhysica C: Superconductivity and its applications
Volume288
Issue number3-4
DOIs
StatePublished - Sep 1 1997
Externally publishedYes

Keywords

  • Electromagnetic waves
  • Josephson effect
  • Proximity effect
  • Stacked junctions
  • Swihart velocity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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