Solar-blind AlGaN photodiodes with very low cutoff wavelength

D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, Manijeh Razeghi

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156 Scopus citations


We report the fabrication and characterization of AlxGa1-xN photodiodes (x∼0.70) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The peak responsivity for -5 V bias is 0.11 A/W at 232 nm, corresponding to an internal quantum efficiency greater than 90%. The device response drops four orders of magnitude by 275 nm and remains at low response for the entire near-ultraviolet and visible spectrum. Improvements were made to the device design including a semitransparent Ni/Au contact layer and a GaN:Mg cap layer, which dramatically increased device response by enhancing the carrier collection efficiency.

Original languageEnglish (US)
Pages (from-to)403-405
Number of pages3
JournalApplied Physics Letters
Issue number4
StatePublished - Jan 24 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Walker, D., Kumar, V., Mi, K., Sandvik, P., Kung, P., Zhang, X. H., & Razeghi, M. (2000). Solar-blind AlGaN photodiodes with very low cutoff wavelength. Applied Physics Letters, 76(4), 403-405.